A silver nanoparticle (AgNP)-loaded Bi2Se3 topological insulator p-n heterojunction photodiode for a near-infrared (NIR) photodetector

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nano Futures Pub Date : 2023-05-09 DOI:10.1088/2399-1984/acd3ca

V. Elangovan, V. Vaiyapuri, Aysha Parveen R, A. Jayaram, Harish Santhanakrishnan, Navaneethan Mani

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引用次数: 0

Abstract

Near-infrared (NIR) photons are expanding advanced applications in optoelectronics. However, while 2D materials like graphene offer an attractive route for NIR photodetection, the alternative for high-performance NIR detection is still evolving. Hence, solution-processed n-Bi2Se3 /p-Si-based 2D heterojunction photodiodes have been fabricated here and used for high-performance NIR detection. Further, we report high photoresponsivity of 248 mA W−1 at 1100 nm, high external quantum efficiency of 22, 23 and 28% for Ag-loaded (at 5, 7.5 and 10%) Bi2Se3 and good stability. The chemical states of Bi2Se3 and Ag are detected using the core-level spectra of x-ray photoelectron spectroscopy. Photoresponse I–V characteristics are investigated under both dark and illumination; the high photocurrent achieved for Ag-loaded Bi2Se3 and the increase in the forward photocurrent under both dark and bright conditions are reported. The temporal photoresponse curve confirms the good stability (photoswitching behavior) and reproducibility with a response time of 0.74 s and a decay time of 0.18 s. Therefore, these unique performance and device parameters of a manufactured photodiode strongly recommend as a potential heterojunction photodiode for an NIR photodetector.

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一种用于近红外(NIR)光电探测器的负载银纳米粒子(AgNP) Bi2Se3拓扑绝缘体p-n异质结光电二极管

近红外（NIR）光子正在扩大光电子的高级应用。然而，尽管石墨烯等2D材料为近红外光电检测提供了一条有吸引力的途径，但高性能近红外检测的替代方案仍在发展中。因此，溶液处理的n-Bi2Se3/p-Si基2D异质结光电二极管已经在这里制造出来，并用于高性能的NIR检测。此外，我们报道了负载Ag（在5%、7.5%和10%）的Bi2Se3在1100 nm下具有248 mA W−1的高光响应性，22、23和28%的高外量子效率和良好的稳定性。利用x射线光电子能谱的核心能级谱检测了Bi2Se3和Ag的化学状态。研究了在黑暗和光照条件下的光响应I–V特性；报道了负载Ag的Bi2Se3获得的高光电流以及在黑暗和明亮条件下正向光电流的增加。时间光响应曲线证实了良好的稳定性（光开关行为）和再现性，响应时间为0.74s，衰减时间为0.18s。因此，强烈推荐制造的光电二极管的这些独特性能和器件参数作为NIR光电探测器的潜在异质结光电二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Futures Chemistry-General Chemistry

CiteScore

4.30

自引率

0.00%

发文量

期刊介绍： Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.