{"title":"Controlled Self Compliance Filamentary Memory Behavior in Al/NiFe2O4/FTO Resistive Switching Device","authors":"Vidit Pandey, Priyanka Nehla, Sandeep Munjal","doi":"10.1007/s40010-023-00842-y","DOIUrl":null,"url":null,"abstract":"<div><p>Herein, we report a controlled non-volatile bipolar resistive switching in nanostructured NiFe<sub>2</sub>O<sub>4</sub> films using a capacitor like Al(aluminum)/NiFe<sub>2</sub>O<sub>4</sub>/FTO(fluorine-doped tin oxide) metal–insulator-metal device, which shows uniform resistive switching with a resistance ratio of high resistance state (HRS) to low resistance state (LRS) more than 3 × 10<sup>2</sup>, accompanied with electroforming-free feature without any application of compliance current (ICC). The device can operate (read and switch) in small voltage and current ranges that makes it a low-power resistive switching device. The conduction mechanism in LRS was found to be Ohmic, whereas the HRS was governed by space charge-limited conduction mechanism. The current voltage and resistance temperature measurements indicate the presence of an interfacial AlO<sub>x</sub> layer with oxygen-related defects near the top Al/NiFe<sub>2</sub>O<sub>4</sub> interface. The device exhibits good program/erase endurance properties, acceptable memory window, and uniform resistive switching. In addition, different intermediate resistance states between HRS and LRS can be obtained in a controlled manner by choosing different stop voltages during the gradual RESET process, which makes the device a multilevel RS device and a potential candidate for future non-volatile resistive random access memory (RRAM).</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 3","pages":"451 - 457"},"PeriodicalIF":0.8000,"publicationDate":"2023-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","FirstCategoryId":"103","ListUrlMain":"https://link.springer.com/article/10.1007/s40010-023-00842-y","RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 2
Abstract
Herein, we report a controlled non-volatile bipolar resistive switching in nanostructured NiFe2O4 films using a capacitor like Al(aluminum)/NiFe2O4/FTO(fluorine-doped tin oxide) metal–insulator-metal device, which shows uniform resistive switching with a resistance ratio of high resistance state (HRS) to low resistance state (LRS) more than 3 × 102, accompanied with electroforming-free feature without any application of compliance current (ICC). The device can operate (read and switch) in small voltage and current ranges that makes it a low-power resistive switching device. The conduction mechanism in LRS was found to be Ohmic, whereas the HRS was governed by space charge-limited conduction mechanism. The current voltage and resistance temperature measurements indicate the presence of an interfacial AlOx layer with oxygen-related defects near the top Al/NiFe2O4 interface. The device exhibits good program/erase endurance properties, acceptable memory window, and uniform resistive switching. In addition, different intermediate resistance states between HRS and LRS can be obtained in a controlled manner by choosing different stop voltages during the gradual RESET process, which makes the device a multilevel RS device and a potential candidate for future non-volatile resistive random access memory (RRAM).