Analysis of electro-chemical RAM synaptic array for energy-efficient weight update

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
He Kang, Nayeon Kim, Seonuk Jeon, Hyun Wook Kim, E. Hong, Seyoung Kim, Jiyong Woo
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引用次数: 1

Abstract

While electro-chemical RAM (ECRAM)-based cross-point synaptic arrays are considered to be promising candidates for energy-efficient neural network computational hardware, array-level analyses to achieve energy-efficient update operations have not yet been performed. In this work, we fabricated CuOx/HfOx/WOx ECRAM arrays and demonstrated linear and symmetrical weight update capabilities in both fully parallel and sequential update operations. Based on the experimental measurements, we showed that the source-drain leakage current (ISD) through the unselected ECRAM cells and resultant energy consumption—which had been neglected thus far—contributed a large portion to the total update energy. We showed that both device engineering to reduce ISD and the selection of an update scheme—for example, column-by-column—that avoided ISD intervention via unselected cells were key to enable energy-efficient neuromorphic computing.
电化学RAM突触阵列节能权值更新分析
虽然基于电化学RAM (ECRAM)的交叉点突触阵列被认为是节能神经网络计算硬件的有希望的候选者,但阵列级分析实现节能更新操作尚未进行。在这项工作中,我们制作了CuOx/HfOx/WOx ECRAM阵列,并演示了在完全并行和顺序更新操作下的线性和对称权重更新能力。基于实验测量,我们表明,通过未选择的ECRAM单元的源漏漏电流(ISD)和由此产生的能量消耗(迄今为止被忽视)在总更新能量中占很大一部分。我们表明,减少ISD的设备设计和更新方案的选择(例如,逐个列)都是实现节能神经形态计算的关键,这些方案避免了未选择细胞的ISD干预。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
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