Nanostructured Color Filters for CMOS Image Sensors

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fanlong Meng;Yuchun Chang;Chong Pan;Chunyan Li
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引用次数: 1

Abstract

Digital color imaging relies on spectral filters on top of a pixelated sensor, such as a CMOS image sensor. The resolution of the image sensor depends on the pixel size. To improve the imaging quality, smaller pixel and spectral filters are therefore required. Dielectric nanostructures, due to their resonant behavior and its tunability, offer the possibility to be assembled into miniature spectral filters, which could potentially replace conventional pigmented and dye-based color filters. In this letter, we designed a color filter based on a rectangular metal aluminum array structure, with a thickness of only 125nm, about one-eighth of a conventional chemical color filter. The influence of array cycle, dielectric layer structure and other parameters on the transmission spectrum and the color filter characteristics were investigated using the Finite Difference Time Domain. By numerical simulation, at a pixel size of $1.2~\mu \text{m}$ , the transmittance of RGB is as high as 82%, 70%, and 91%. The nanostructured color filter can have potential applications in the field of high-resolution color imaging.
用于CMOS图像传感器的纳米结构滤色片
数字彩色成像依赖于像素化传感器(如CMOS图像传感器)顶部的光谱滤波器。图像传感器的分辨率取决于像素大小。因此,为了提高成像质量,需要更小的像素和光谱滤波器。介电纳米结构由于其共振行为及其可调谐性,提供了组装成微型光谱滤光片的可能性,这可能会取代传统的着色和染料滤色器。在这封信中,我们设计了一种基于矩形金属铝阵列结构的滤色器,厚度仅为125nm,约为传统化学滤色器的八分之一。利用时域有限差分法研究了阵列周期、介质层结构等参数对透射光谱和滤色器特性的影响。通过数值模拟,在像素大小为$1.2~\mu\text{m}$的情况下,RGB的透射率分别高达82%、70%和91%。纳米结构滤色器在高分辨率彩色成像领域具有潜在的应用。
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来源期刊
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters 工程技术-工程:电子与电气
CiteScore
5.00
自引率
3.80%
发文量
404
审稿时长
2.0 months
期刊介绍: IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.
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