The optical gain of GaAs1−x−y N x Bi y nanowires under the [100] direction uniaxial stress

Abstract

Based on the 16-band effective-mass theory, the band structures and optical gain of GaAs1−x−y N x Bi y nanowires under [100] direction uniaxial stress are investigated. Our calculations indicate, as the increase of stress, the first gain peak position can be redshifted to optical communication band even though nitrogen and bismuth contents are less than 0.05, and we almost obtain pure optical gain along z-direction due to the strong inhibition of optical gain along x-direction. Moreover, GaAs1−x−y N x Bi y nanowires with high nitrogen contents and large diameters are apt to be adjusted to 1310–1550 nm under the proper stress.