The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC

IF 1.6 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Transactions on Electrical and Electronic Materials Pub Date : 2023-06-14 DOI:10.1007/s42341-023-00451-x

E. Kang

引用次数: 0

查看原文本刊更多论文

基于SiC的1200v沟槽栅MOSFET的电学特性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Transactions on Electrical and Electronic Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

4.30

自引率

0.00%

发文量

期刊介绍： The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities.The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials.Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.