Structural investigation of ZrN+Si3N4 thin films co-deposited by magnetron sputtering

IF 2.4 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Surface Engineering Pub Date : 2022-09-02 DOI:10.1080/02670844.2022.2154965

I.L. Dias, A. R. Terto, P. C. Silva Neto, D. A. Ramirez, E. Tentardini

引用次数: 1

Abstract

ABSTRACT Zirconium silicon nitride thin films with 1.6% Si addition were deposited via reactive magnetron sputtering and characterized by RBS, SEM-FEG, GAXRD, XPS and high temperature oxidation tests, aiming to investigate how silicon is structurally inserted in Zirconium nitride (ZrN) matrix. GAXRD results show a reduction in lattice parameter and grain size due to Si incorporation and XPS analyses demonstrate Si is present only in nitride form. Such observations proved the non-formation of substitutional or interstitial solid solution in ZrN, but the presence of Si3N4, even in low Si concentrations.

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磁控溅射共沉积ZrN+Si3N4薄膜的结构研究

摘要采用反应磁控溅射法沉积了硅添加量为1.6%的氮化锆硅薄膜，并通过RBS、SEM-FEG、GAXRD、XPS和高温氧化测试对其进行了表征，旨在研究硅在氮化锆（ZrN）基体中的结构嵌入。GAXRD结果显示，由于Si的掺入，晶格参数和晶粒尺寸减小，XPS分析表明Si仅以氮化物形式存在。这些观察结果证明，即使在低Si浓度下，ZrN中也没有形成取代或间隙固溶体，而是存在Si3N4。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Surface Engineering 工程技术-材料科学：膜

CiteScore

5.60

自引率

14.30%

发文量

审稿时长

2.3 months

期刊介绍： Surface Engineering provides a forum for the publication of refereed material on both the theory and practice of this important enabling technology, embracing science, technology and engineering. Coverage includes design, surface modification technologies and process control, and the characterisation and properties of the final system or component, including quality control and non-destructive examination.