Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-06-04 DOI:10.1007/s10825-023-02051-7

Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma

引用次数: 0

Abstract

We present the results of a simulation study of Mg₂Si heterojunction-based SOI TFETs using TCAD. Mg₂Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (I_ON), off-current (I_OFF), and subthreshold swing were found to be 1.089 × 10⁻⁵A/μm, 8.632 × 10⁻¹⁷A/μm, 1.26 × 10¹¹, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.

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基于Mg2Si异质结构的SOI TFET具有陡峭的亚阈值摆幅和高电流驱动性

我们提出了使用TCAD对Mg2Si异质结SOI tfet进行模拟研究的结果。采用Mg2Si作为低带隙材料，实现高导通电流。所提出的结构提高了隧道速率，显著改善了电流传导和阈下摆幅。通流(ION)、关流(IOFF)和亚阈值摆幅分别为1.089 × 10−5A/μm、8.632 × 10−17A/μm、1.26 × 1011和27 mV/decade。此外，还对电子费米势、直流和模拟/射频性能的物理解释进行了系统研究。该器件遵循ITRS低功耗开关性能路线图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.