Review on Carbon Nanotube Field Effect Transistor for Nanoscale Regime

IF 1.4 4区材料科学 Q4 BIOTECHNOLOGY & APPLIED MICROBIOLOGY

Current Nanoscience Pub Date : 2023-05-10 DOI:10.2174/1573413719666230510101913

V.K. Sharma, M. Maqbool

{"title":"Review on Carbon Nanotube Field Effect Transistor for Nanoscale Regime","authors":"V.K. Sharma, M. Maqbool","doi":"10.2174/1573413719666230510101913","DOIUrl":null,"url":null,"abstract":"\n\nThe need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems.\n\n\n\nIn this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems.\n\n\n\nThe CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region.\n\n\n\nThe value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters.\n\n\n\nCNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.\n","PeriodicalId":10827,"journal":{"name":"Current Nanoscience","volume":" ","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Nanoscience","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.2174/1573413719666230510101913","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"BIOTECHNOLOGY & APPLIED MICROBIOLOGY","Score":null,"Total":0}

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Abstract

The need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems. In this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems. The CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region. The value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters. CNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.

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纳米级碳纳米管场效应晶体管研究进展

随着技术的进步，对便携式系统的高性能、小尺寸、低延迟、低功耗和长电池备份的需求越来越大。使用缩放方法可以改进便携式系统的许多特性。在缩放过程中，减小器件尺寸会带来严重的困难，包括短沟道效应（SCE）和漏电流，这会使系统的特性退化。在这篇综述文章中，详细讨论了一种趋势性的碳纳米管场效应晶体管（CNTFET）技术。CNTFET可以取代传统的金属氧化物半导体场效应晶体管（MOSFET）技术，以克服纳米范围内的SCE问题，并满足便携式系统的要求。CNTFET是一种非常好的纳米级技术，因为它具有一维能带结构、高跨导、高电子迁移率、对沟道形成的卓越控制以及更好的阈值电压。该技术用于通过取代MOSFET技术来构建高性能和低功耗电路。与MOSFET相比，CNTFET将碳纳米管（CNT）作为沟道区域。CNTFET中阈值电压的值随着CNT的直径而变化。器件的阈值电压控制电路级设计的许多参数。因此，本文介绍了CNTFET器件的详细操作和特性。本文还介绍了现有的基于CNTFET的三元全加器（TFA）电路，用于不同参数的性能评估。CNTFET技术是纳米级SCE的可能解决方案，能够设计高效的逻辑电路。与MOSFET电路相比，使用CNTFET技术的电路可以提供更好的性能和各种优点，包括快速、小面积和低功耗。因此，CNTFET技术是纳米级电路设计的最佳选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Current Nanoscience 工程技术-材料科学：综合

CiteScore

3.50

自引率

6.70%

发文量

审稿时长

4.4 months

期刊介绍： Current Nanoscience publishes (a) Authoritative/Mini Reviews, and (b) Original Research and Highlights written by experts covering the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano-structures, nano-bubbles, nano-droplets and nanofluids. Applications of nanoscience in physics, material science, chemistry, synthesis, environmental science, electronics, biomedical nanotechnology, biomedical engineering, biotechnology, medicine and pharmaceuticals are also covered. The journal is essential to all researches involved in nanoscience and its applied and fundamental areas of science, chemistry, physics, material science, engineering and medicine. Current Nanoscience also welcomes submissions on the following topics of Nanoscience and Nanotechnology: Nanoelectronics and photonics Advanced Nanomaterials Nanofabrication and measurement Nanobiotechnology and nanomedicine Nanotechnology for energy Sensors and actuator Computational nanoscience and technology.