High-Performance SPR Sensor Using Wurtzite Nitride Semiconductors and TMDC: a Comparative Study

IF 3.3 4区物理与天体物理 Q2 CHEMISTRY, PHYSICAL

Plasmonics Pub Date : 2023-09-08 DOI:10.1007/s11468-023-02038-x

Tanwin M. S. Ashrafi, Goutam Mohanty

{"title":"High-Performance SPR Sensor Using Wurtzite Nitride Semiconductors and TMDC: a Comparative Study","authors":"Tanwin M. S. Ashrafi, Goutam Mohanty","doi":"10.1007/s11468-023-02038-x","DOIUrl":null,"url":null,"abstract":"<div>This theoretical study focuses on the performance of the surface plasmon resonance (SPR) sensor by strategically including various heterostructures in between the plasmonic metal and sensing medium. The heterostructure consists of a wurtzite nitride semiconductor and a two-dimensional (2D) material, specifically transition-metal dichalcogenides (TMDC). The angular interrogation approach is used to assess the sensor’s efficacy which includes all commonly used critical parameters. The study also outlines the range of refractive indices (RI) in the sensing medium that elicit exceptional and notable responses from the proposed SPR structure. Based on the sensitivity, detection accuracy (DA), and figure of merit (FOM) values, it is determined that a TMDC material, specifically tungsten disulfide (WS2), combined with a wurtzite nitride semiconductor (such as gallium nitride, indium nitride, or aluminum nitride), offers the best performance. Among all heterostructures, GaN-WS2 exhibits the highest sensitivity. In contrast, AlN-WS2 exhibits remarkable performance in terms of DA, FOM, and the evanescent field intensity factor. Furthermore, the proposed SPR structure with InN-WS2 demonstrates maximum shifts in resonance angle, occurring within sensing RI range of 1.372 to 1.389. Similarly, AlN-WS2 exhibits the maximum shifts in resonance angle within the range from 1.387 to 1.4. GaN-WS2, however, shows the strongest response to resonance angle shifts within the range from 1.38 to 1.396.</div>","PeriodicalId":736,"journal":{"name":"Plasmonics","volume":"19 2","pages":"817 - 823"},"PeriodicalIF":3.3000,"publicationDate":"2023-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11468-023-02038-x","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

This theoretical study focuses on the performance of the surface plasmon resonance (SPR) sensor by strategically including various heterostructures in between the plasmonic metal and sensing medium. The heterostructure consists of a wurtzite nitride semiconductor and a two-dimensional (2D) material, specifically transition-metal dichalcogenides (TMDC). The angular interrogation approach is used to assess the sensor’s efficacy which includes all commonly used critical parameters. The study also outlines the range of refractive indices (RI) in the sensing medium that elicit exceptional and notable responses from the proposed SPR structure. Based on the sensitivity, detection accuracy (DA), and figure of merit (FOM) values, it is determined that a TMDC material, specifically tungsten disulfide (WS₂), combined with a wurtzite nitride semiconductor (such as gallium nitride, indium nitride, or aluminum nitride), offers the best performance. Among all heterostructures, GaN-WS₂ exhibits the highest sensitivity. In contrast, AlN-WS₂ exhibits remarkable performance in terms of DA, FOM, and the evanescent field intensity factor. Furthermore, the proposed SPR structure with InN-WS₂ demonstrates maximum shifts in resonance angle, occurring within sensing RI range of 1.372 to 1.389. Similarly, AlN-WS₂ exhibits the maximum shifts in resonance angle within the range from 1.387 to 1.4. GaN-WS₂, however, shows the strongest response to resonance angle shifts within the range from 1.38 to 1.396.

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氮化纤锌矿半导体与TMDC高性能SPR传感器的比较研究

这项理论研究的重点是通过在等离子金属和传感介质之间战略性地加入各种异质结构，研究表面等离子体共振（SPR）传感器的性能。异质结构由晶圆氮化物半导体和二维（2D）材料组成，特别是过渡金属二卤化物（TMDC）。采用角度询问方法来评估传感器的功效，其中包括所有常用的关键参数。研究还概述了传感介质中的折射率 (RI) 范围，这些折射率可引起拟议 SPR 结构的特殊和显著响应。根据灵敏度、检测精度（DA）和优越性（FOM）值，可以确定 TMDC 材料（特别是二硫化钨（WS2））与钨氮化物半导体（如氮化镓、氮化铟或氮化铝）相结合具有最佳性能。在所有异质结构中，GaN-WS2 的灵敏度最高。相比之下，AlN-WS2 在DA、FOM 和蒸发场强因子方面表现出卓越的性能。此外，采用 InN-WS2 的拟议 SPR 结构在 1.372 至 1.389 的传感 RI 范围内显示出最大的共振角偏移。同样，AlN-WS2 在 1.387 至 1.4 的范围内显示出最大的共振角偏移。然而，GaN-WS2 对 1.38 至 1.396 范围内的共振角偏移反应最强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Plasmonics 工程技术-材料科学：综合

CiteScore

5.90

自引率

6.70%

发文量

164

审稿时长

2.1 months

期刊介绍： Plasmonics is an international forum for the publication of peer-reviewed leading-edge original articles that both advance and report our knowledge base and practice of the interactions of free-metal electrons, Plasmons. Topics covered include notable advances in the theory, Physics, and applications of surface plasmons in metals, to the rapidly emerging areas of nanotechnology, biophotonics, sensing, biochemistry and medicine. Topics, including the theory, synthesis and optical properties of noble metal nanostructures, patterned surfaces or materials, continuous or grated surfaces, devices, or wires for their multifarious applications are particularly welcome. Typical applications might include but are not limited to, surface enhanced spectroscopic properties, such as Raman scattering or fluorescence, as well developments in techniques such as surface plasmon resonance and near-field scanning optical microscopy.