Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, Patrick Schalberger, Harald Kuebler, Tilman Pfau, Norbert Fruehauf
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引用次数: 1

Abstract

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.

Abstract Image

基于IGZO半导体技术的紫外光电探测器和读出器
在这项工作中,通过金属-半导体-金属(MSM)结构实现了实时紫外光电探测器。非晶铟镓氧化锌(a‐IGZO)用作半导体材料,金用作金属电极。单个传感器的读出由一个全增强的a - IGZO薄膜晶体管(TFT)运算放大器和一个作为反馈电阻的开关电容(SC)组成的跨阻放大器(TIA)实现。光传感器和透阻放大器都是在玻璃基板上制造的。所测光传感器具有高响应率R、低响应时间tRES和良好的噪声等效功率值NEP。
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来源期刊
Journal of the Society for Information Display
Journal of the Society for Information Display 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.70%
发文量
98
审稿时长
3 months
期刊介绍: The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.
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