{"title":"Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage","authors":"Shakaib Hussain, Abdul Jalil, Arooba Kanwal, Syed Zafar Ilyas, Sarfraz Ahmed, Ather Hassan","doi":"10.1007/s10825-023-02084-y","DOIUrl":null,"url":null,"abstract":"<div><p>To overcome the prevalent challenge of reversible hydrogen storage, surface activation by metal atom decoration holds a great promise, thus, boosting the hydrogen storage capacity. In this work, sodium (Na) decorated beryllonitrene (BeN<sub>4</sub>) monolayer has been identified as a hydrogen storage material using first-principles calculations. Our results reveal that Na decorated BeN<sub>4</sub> has ability to adsorb upto 12 H<sub>2</sub> molecules, leading to high gravimetric density of 4.26 wt.%. The adsorption energy per H<sub>2</sub> (adsorbate) is moderate, i.e., between 0.13 and 0.298 eV, good enough for hydrogen storage in practical applications. AIMD simulations disclose that adsorbate experiences no kinetic hindrance in desorption. Moreover, the desorption temperature of H<sub>2</sub> molecule on NaBeN<sub>4</sub> monolayer (substrate) varies from 162.5 to 382 K, confirming the reversibility of substrate and thus ensuring its potential for hydrogen storage medium. The short recovery time predicts that the substrate responds rapidly in the presence of H<sub>2</sub> molecules, which guarantees the fast kinetics of adsorbate. Our calculations predict Na-decorated BeN<sub>4</sub> monolayer as an excellent candidate for reversible and high-capacity hydrogen storage material.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1409 - 1414"},"PeriodicalIF":2.2000,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02084-y.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02084-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
To overcome the prevalent challenge of reversible hydrogen storage, surface activation by metal atom decoration holds a great promise, thus, boosting the hydrogen storage capacity. In this work, sodium (Na) decorated beryllonitrene (BeN4) monolayer has been identified as a hydrogen storage material using first-principles calculations. Our results reveal that Na decorated BeN4 has ability to adsorb upto 12 H2 molecules, leading to high gravimetric density of 4.26 wt.%. The adsorption energy per H2 (adsorbate) is moderate, i.e., between 0.13 and 0.298 eV, good enough for hydrogen storage in practical applications. AIMD simulations disclose that adsorbate experiences no kinetic hindrance in desorption. Moreover, the desorption temperature of H2 molecule on NaBeN4 monolayer (substrate) varies from 162.5 to 382 K, confirming the reversibility of substrate and thus ensuring its potential for hydrogen storage medium. The short recovery time predicts that the substrate responds rapidly in the presence of H2 molecules, which guarantees the fast kinetics of adsorbate. Our calculations predict Na-decorated BeN4 monolayer as an excellent candidate for reversible and high-capacity hydrogen storage material.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.