Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shakaib Hussain, Abdul Jalil, Arooba Kanwal, Syed Zafar Ilyas, Sarfraz Ahmed, Ather Hassan
{"title":"Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage","authors":"Shakaib Hussain,&nbsp;Abdul Jalil,&nbsp;Arooba Kanwal,&nbsp;Syed Zafar Ilyas,&nbsp;Sarfraz Ahmed,&nbsp;Ather Hassan","doi":"10.1007/s10825-023-02084-y","DOIUrl":null,"url":null,"abstract":"<div><p>To overcome the prevalent challenge of reversible hydrogen storage, surface activation by metal atom decoration holds a great promise, thus, boosting the hydrogen storage capacity. In this work, sodium (Na) decorated beryllonitrene (BeN<sub>4</sub>) monolayer has been identified as a hydrogen storage material using first-principles calculations. Our results reveal that Na decorated BeN<sub>4</sub> has ability to adsorb upto 12 H<sub>2</sub> molecules, leading to high gravimetric density of 4.26 wt.%. The adsorption energy per H<sub>2</sub> (adsorbate) is moderate, i.e., between 0.13 and 0.298 eV, good enough for hydrogen storage in practical applications. AIMD simulations disclose that adsorbate experiences no kinetic hindrance in desorption. Moreover, the desorption temperature of H<sub>2</sub> molecule on NaBeN<sub>4</sub> monolayer (substrate) varies from 162.5 to 382 K, confirming the reversibility of substrate and thus ensuring its potential for hydrogen storage medium. The short recovery time predicts that the substrate responds rapidly in the presence of H<sub>2</sub> molecules, which guarantees the fast kinetics of adsorbate. Our calculations predict Na-decorated BeN<sub>4</sub> monolayer as an excellent candidate for reversible and high-capacity hydrogen storage material.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1409 - 1414"},"PeriodicalIF":2.2000,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02084-y.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02084-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

To overcome the prevalent challenge of reversible hydrogen storage, surface activation by metal atom decoration holds a great promise, thus, boosting the hydrogen storage capacity. In this work, sodium (Na) decorated beryllonitrene (BeN4) monolayer has been identified as a hydrogen storage material using first-principles calculations. Our results reveal that Na decorated BeN4 has ability to adsorb upto 12 H2 molecules, leading to high gravimetric density of 4.26 wt.%. The adsorption energy per H2 (adsorbate) is moderate, i.e., between 0.13 and 0.298 eV, good enough for hydrogen storage in practical applications. AIMD simulations disclose that adsorbate experiences no kinetic hindrance in desorption. Moreover, the desorption temperature of H2 molecule on NaBeN4 monolayer (substrate) varies from 162.5 to 382 K, confirming the reversibility of substrate and thus ensuring its potential for hydrogen storage medium. The short recovery time predicts that the substrate responds rapidly in the presence of H2 molecules, which guarantees the fast kinetics of adsorbate. Our calculations predict Na-decorated BeN4 monolayer as an excellent candidate for reversible and high-capacity hydrogen storage material.

Abstract Image

稳定的二维钠修饰BeN4:储氢的潜在候选者
为了克服可逆储氢的普遍挑战,金属原子修饰的表面活化具有很大的前景,从而提高储氢能力。在这项工作中,使用第一性原理计算,钠(Na)修饰的绿柱石(BeN4)单层被确定为储氢材料。我们的结果表明,钠修饰的BeN4能够吸附多达12个H2分子,导致4.26wt.%的高重量密度。每个H2(吸附质)的吸附能适中,即在0.13和0.298eV之间,足以在实际应用中储氢。AIMD模拟表明,吸附质在解吸过程中没有受到动力学阻碍。此外,H2分子在NaBeN4单层(基底)上的解吸温度在162.5~382K之间变化,证实了基底的可逆性,从而确保了其作为储氢介质的潜力。短的回收时间预测了底物在H2分子存在下的快速反应,这保证了吸附质的快速动力学。我们的计算预测Na修饰的BeN4单层是可逆和高容量储氢材料的优秀候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信