Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-07-22 DOI:10.1007/s10825-023-02074-0

M. Muthu Manjula, R. Ramesh

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Abstract

This work investigates the low-frequency noise performance of a 2H-type monolayer/bilayer molybdenum ditelluride (MoTe₂) double-gate MOSFET. A hybrid simulation technique involving both QuantumWise ATK and Sentaurus TCAD tools has been used to simulate the device characteristics. First, density functional theory (DFT) has been used to simulate the electrical characteristics of monolayer and bilayer 2H–MoTe₂. The parameters (bandgap and effective mass, mobility etc.) obtained using the atomistic simulator tool are exported into Sentaurus TCAD to simulate the drain current characteristics. We have used the kinetic velocity model and quantum model to account for the ballistic mobility and quantum effects in the device. The noise simulation for the bilayer MoTe₂ is computed using the impedance field method. Noise parameters such as noise power spectral density (S_ID) as a function of frequency and bias, and noise figure have also been simulated.

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二碲化钼双栅极MOSFET的低频噪声性能

本文研究了2H型单层/双层二碲化钼（MoTe2）双栅极MOSFET的低频噪声性能。QuantumWise ATK和Sentaurus TCAD工具的混合模拟技术已用于模拟设备特性。首先，使用密度泛函理论（DFT）模拟了单层和双层2H–MoTe2的电学特性。使用原子模拟器工具获得的参数（带隙和有效质量、迁移率等）被导出到Sentaurus TCAD中，以模拟漏极电流特性。我们使用了动力学速度模型和量子模型来解释该装置中的弹道迁移率和量子效应。使用阻抗场方法计算了双层MoTe2的噪声模拟。还模拟了噪声参数，如作为频率和偏置函数的噪声功率谱密度（SID）以及噪声系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.