Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation

IF 3.2 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Jianpei Wang,  and , Ping Yang*, 
{"title":"Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation","authors":"Jianpei Wang,&nbsp; and ,&nbsp;Ping Yang*,&nbsp;","doi":"10.1021/acs.cgd.3c00797","DOIUrl":null,"url":null,"abstract":"<p >The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"23 10","pages":"7403–7411"},"PeriodicalIF":3.2000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.3c00797","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.

Abstract Image

在铜嵌入的AZO/Cu/AZO异质界面上构建高效的光电性能
制备了AZO/Cu/AZO异质界面,以改善AZO的光电性能。实验结果表明,Cu层在8nm处,样品的(002)峰强度达到最大,结晶质量最好,粗糙度最低,透射率和电导率值较好。同时,模拟结果表明,AZO/Cu的界面是键合的,AZO/Cu的电导率高于AZO,但透射率相反。这与实验结果是一致的。研究表明,通过调整Cu嵌入,我们可以设计出具有AZO/Cu/AZO异质界面的高效光电性能。
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来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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