Electronic Parameters of Diode Based Organometallic Semiconductor Dyes Centered Ruthenium Complexes with Active COOH Terminals.

Abstract

In this study, the ruthenium complexes, which is an organometallic N-3 and C-106 semiconductor material, was coated on indium tin oxide (ITO) by using the self-assembled technique and thus a diode containing an organometallic interface was produced. The effects of this interface on the electronic parameters of the diode were investigated. It is aimed to improve the heterogeneity problem of the inorganic/organic interface by chemically bonding these materials from COOH active parts to the ITO surface. In order to understand how the electronic parameters of the diode change with this modification, the Schottky diode electrical characterization approach has been used. The charge mobility of the diode was calculated using the current density-voltage curve (J-V) characteristic with Space Charge Limited Current (SCLC) technique. When the electrical field is applied to the diode, it can be said that the ruthenium complexes molecules create an electrical dipole and the tunneling current is transferred to the anode contact ITO through the ruthenium molecule through the charge carrier, thus contributing to the hole injection. The morphology of these interface modifications was examined by Atomic Force Microscope (AFM) and surface potential energy by KelvinProbe Force Microscope (KPFM). To investigate local conductivity of bare ITO and modified ITO surface, Scanning Spreading Resistance Microscopy (SSRM) that is a conductive AFM analyzing technique were performed by applying voltage to the conductive tip and to the sample. According to the results of this work the diode containing N-3 material shows the best performance in terms of charge injection to the ITO due to possess the lowest barrier height Φ_b as 0.43 eV.