{"title":"Work Function Modulation of Few-Layer Graphene by Swift Heavy Ion Irradiation.","authors":"P K Kasana, Jyoti Shakya, Tanuja Mohanty","doi":"10.1166/jnn.2021.19470","DOIUrl":null,"url":null,"abstract":"<p><p>Here, we report the structural and electronic modification induced in chemical vapor deposited graphene by using swift heavy ions (70 MeV Ni<sup>6+</sup>).Raman spectroscopy was used to quantify the irradiation-induced modification in vibrational properties. The increase in defect density with fluence causes an increase in the intensity ratio of its characteristic Raman D and G band. The increase in defect density also results in a decrease in crystallite size. The changes in the crystal structure are observed from X-rays diffraction measurement. Swift heavy ion irradiation induced defect, modified the surface roughness and surface potential of graphene thin film as measured from atomic force microscopy and scanning Kelvin probe microscopy respectively. The increase in the work function, surface roughness as well as defect concentration with fluence, indicate the possibility of linear correlation between them. Presence of defects in graphene sheets strongly affects surface electronic and optical properties of the material that can be used to tailor the optoelectronics device performance.</p>","PeriodicalId":16417,"journal":{"name":"Journal of nanoscience and nanotechnology","volume":"21 11","pages":"5603-5610"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of nanoscience and nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/jnn.2021.19470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Here, we report the structural and electronic modification induced in chemical vapor deposited graphene by using swift heavy ions (70 MeV Ni6+).Raman spectroscopy was used to quantify the irradiation-induced modification in vibrational properties. The increase in defect density with fluence causes an increase in the intensity ratio of its characteristic Raman D and G band. The increase in defect density also results in a decrease in crystallite size. The changes in the crystal structure are observed from X-rays diffraction measurement. Swift heavy ion irradiation induced defect, modified the surface roughness and surface potential of graphene thin film as measured from atomic force microscopy and scanning Kelvin probe microscopy respectively. The increase in the work function, surface roughness as well as defect concentration with fluence, indicate the possibility of linear correlation between them. Presence of defects in graphene sheets strongly affects surface electronic and optical properties of the material that can be used to tailor the optoelectronics device performance.
期刊介绍:
JNN is a multidisciplinary peer-reviewed journal covering fundamental and applied research in all disciplines of science, engineering and medicine. JNN publishes all aspects of nanoscale science and technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, theory and computation, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology.