Effect of Structural Deficiencies on Bi-Ferroic Behaviors of Lead-Free Bi0.5 Na0.40K0.10TiO₃ Films.

Ngo Due Quan, Nguyen Due Minh, Hoang Viet Hung
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引用次数: 0

Abstract

Lead-free Bi0.5Na0.4K0.1TiO₃ (BNKT) ferroelectric films on Pt/TI/SIO₂/Si substrates were prepared via a sol-gel spin coating routine. The microstructures and multiferroic behaviors of the films were examined intimately as a function of the annealing time. A rise of annealing time enhanced the crystallization of the films via the perovskite structure. The multiferroic behavior, including simultaneously the magnetic and ferroelectric orders, was observed altogether the films. When the annealing time rose, ferroelectric and magnetic properties were found significantly increased. The remnant polarization (Pr), also as maximum polarization (Pm) respectively increased to the very best values of 11.5 µC/cm² and 40.0 µC/cm² under an applied electric field of 500 kV/cm. The saturated magnetization (Ms) of films increased to 2.3 emu/cm³ for the annealing time of 60 minutes. Oxygen vacancies, originating from the evaporation of metal ions during annealing at high temperatures are attributed to the explanation for ferromagnetism within the BNKT films.

结构缺陷对无铅Bi0.5 Na0.40K0.10TiO₃薄膜双铁行为的影响
采用溶胶-凝胶自旋镀膜法在Pt/TI/SIO₂/Si衬底上制备了无铅Bi0.5Na0.4K0.1TiO₃(BNKT)铁电薄膜。研究了薄膜的显微结构和多铁性随退火时间的变化规律。退火时间的延长促进了薄膜通过钙钛矿结构的结晶。同时观察到薄膜的多铁性,包括磁性和铁电性。随着退火时间的延长,材料的铁电性能和磁性能显著提高。在外加500 kV/cm的电场作用下,残余极化(Pr)和最大极化(Pm)分别增加到11.5µC/cm²和40.0µC/cm²的最佳值。退火时间为60分钟时,薄膜的饱和磁化强度(Ms)提高到2.3 emu/cm³。由于金属离子在高温退火过程中蒸发而产生的氧空位归因于BNKT薄膜内铁磁性的解释。
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来源期刊
Journal of nanoscience and nanotechnology
Journal of nanoscience and nanotechnology 工程技术-材料科学:综合
自引率
0.00%
发文量
0
审稿时长
3.6 months
期刊介绍: JNN is a multidisciplinary peer-reviewed journal covering fundamental and applied research in all disciplines of science, engineering and medicine. JNN publishes all aspects of nanoscale science and technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, theory and computation, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology.
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