Large and Local Magnetoresistance in a State-of-the-Art Perpendicular Magnetic Medium.

IF 4.9 Q2 NANOSCIENCE & NANOTECHNOLOGY
Nanotechnology, Science and Applications Pub Date : 2021-01-11 eCollection Date: 2021-01-01 DOI:10.2147/NSA.S289055
Morgan Williamson, Cheng Wang, Pin-Wei Huang, Ganping Ju, Maxim Tsoi
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引用次数: 0

Abstract

Purpose: Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and, when combined with magnetotransport phenomena for read/write operations, may lead to a novel concept for magnetic recording with high areal density.

Materials and methods: The CoPtCr films were deposited by an epitaxy-like sputtering and contained several perpendicularly magnetized granular-media layers with different coercivities; they are very much like the state-of-the-art perpendicular magnetic medium, which can be found in today's hard disc drives. Magnetoresistive properties of bulk films were assessed by measuring the film resistance in the standard Van der Pauw geometry, while the local transport was probed by the point-contact technique.

Results: The bulk measurements showed only a negligible magnetoresistance of less than 0.02%. In contrast, the local point-contact measurements revealed giant-magnetoresistance-like changes ΔR in local resistance of the contact R with more than 10,000% ratio ΔR/R.

Conclusion: The observed large and local magnetoresistive effect could be tentatively attributed to a tunnel magnetoresistance between oxide-segregated CoPtCr grains with different coercivities. The tunneling picture of electronic transport in our granular medium was confirmed by the observation of tunneling-like current-voltage characteristics of the contacts and bias dependence of the contact magnetoresistance - both the local point-contact resistance and magnetoresistance were found to decrease with the applied dc bias.

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最先进垂直磁性介质中的大磁阻和局部磁阻。
目的:通过体电阻和点接触磁阻测量,分别在宏观和微观尺度上研究颗粒状氧化分离CoPtCr膜的磁输运特性。这种垂直的磁性介质用于最先进的硬盘驱动器,当与读/写操作的磁输运现象相结合时,可能会导致高面密度磁记录的新概念。材料与方法:采用类外延溅射法制备CoPtCr薄膜,薄膜中含有若干具有不同矫顽力的垂直磁化颗粒介质层;它们非常像最先进的垂直磁性介质,可以在今天的硬盘驱动器中找到。通过测量标准范德泡几何形状下的薄膜电阻来评估体膜的磁阻特性,而局部输运则通过点接触技术来探测。结果:体积测量显示磁阻小于0.02%,可忽略不计。相比之下,局部点接触测量显示,接触R的局部电阻变化ΔR大于10,000% ΔR/R。结论:观察到的大的局部磁阻效应可以暂时归因于不同矫顽力的CoPtCr晶粒之间的隧道磁阻效应。电子输运在粒状介质中的隧穿现象通过观察触点的隧穿式电流-电压特性和触点磁电阻的偏置依赖性得到了证实——局部点接触电阻和磁电阻都随着施加直流偏置而减小。
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来源期刊
Nanotechnology, Science and Applications
Nanotechnology, Science and Applications NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
11.70
自引率
0.00%
发文量
3
审稿时长
16 weeks
期刊介绍: Nanotechnology, Science and Applications is an international, peer-reviewed, Open Access journal that focuses on the science of nanotechnology in a wide range of industrial and academic applications. The journal is characterized by the rapid reporting of reviews, original research, and application studies across all sectors, including engineering, optics, bio-medicine, cosmetics, textiles, resource sustainability and science. Applied research into nano-materials, particles, nano-structures and fabrication, diagnostics and analytics, drug delivery and toxicology constitute the primary direction of the journal.
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