Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape.

IF 14.7 1区 综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES
Abderrahime Sekkat, Maciej Oskar Liedke, Viet Huong Nguyen, Maik Butterling, Federico Baiutti, Juan de Dios Sirvent Veru, Matthieu Weber, Laetitia Rapenne, Daniel Bellet, Guy Chichignoud, Anne Kaminski-Cachopo, Eric Hirschmann, Andreas Wagner, David Muñoz-Rojas
{"title":"Chemical deposition of Cu<sub>2</sub>O films with ultra-low resistivity: correlation with the defect landscape.","authors":"Abderrahime Sekkat,&nbsp;Maciej Oskar Liedke,&nbsp;Viet Huong Nguyen,&nbsp;Maik Butterling,&nbsp;Federico Baiutti,&nbsp;Juan de Dios Sirvent Veru,&nbsp;Matthieu Weber,&nbsp;Laetitia Rapenne,&nbsp;Daniel Bellet,&nbsp;Guy Chichignoud,&nbsp;Anne Kaminski-Cachopo,&nbsp;Eric Hirschmann,&nbsp;Andreas Wagner,&nbsp;David Muñoz-Rojas","doi":"10.1038/s41467-022-32943-4","DOIUrl":null,"url":null,"abstract":"<p><p>Cuprous oxide (Cu<sub>2</sub>O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu<sub>2</sub>O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.10<sup>14</sup>-2.10<sup>18</sup> cm<sup>-3</sup>), mobility (1-86 cm<sup>2</sup>/V.s), and optical bandgap (2.2-2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (positron annihilation spectroscopy (PAS), Raman spectroscopy and photoluminescence). Our results reveal the existence of large complex defects and the decrease of the overall defect concentration in the films with increasing oxygen fraction used during deposition.</p>","PeriodicalId":19066,"journal":{"name":"Nature Communications","volume":" ","pages":"5322"},"PeriodicalIF":14.7000,"publicationDate":"2022-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9463139/pdf/","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Communications","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.1038/s41467-022-32943-4","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 11

Abstract

Cuprous oxide (Cu2O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu2O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.1014-2.1018 cm-3), mobility (1-86 cm2/V.s), and optical bandgap (2.2-2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (positron annihilation spectroscopy (PAS), Raman spectroscopy and photoluminescence). Our results reveal the existence of large complex defects and the decrease of the overall defect concentration in the films with increasing oxygen fraction used during deposition.

Abstract Image

Abstract Image

Abstract Image

超低电阻率Cu2O薄膜的化学沉积:与缺陷景观的关系。
氧化亚铜(Cu2O)是一种具有广泛应用前景的p型半导体材料。到目前为止,通过物理方法和/或高温(~1000°C)沉积的薄膜的电阻率值最低,限制了它们的质量积分。图中Cu2O薄膜的超低电阻率值为0.4 Ω。通过大气压空间原子层沉积,在260°C下沉积cm,这是一种可扩展的化学方法。载流子浓度(7.1014-2.1018 cm-3)、迁移率(1-86 cm2/V.s)和光带隙(2.2-2.48 eV)可以通过调节沉积过程中使用的氧气分数来调节。结合正电子湮灭光谱(PAS)、拉曼光谱和光致发光技术,揭示了薄膜的性能与缺陷景观相关。我们的研究结果表明,随着沉积过程中氧含量的增加,薄膜中存在较大的复杂缺陷,并且总缺陷浓度降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Nature Communications
Nature Communications Biological Science Disciplines-
CiteScore
24.90
自引率
2.40%
发文量
6928
审稿时长
3.7 months
期刊介绍: Nature Communications, an open-access journal, publishes high-quality research spanning all areas of the natural sciences. Papers featured in the journal showcase significant advances relevant to specialists in each respective field. With a 2-year impact factor of 16.6 (2022) and a median time of 8 days from submission to the first editorial decision, Nature Communications is committed to rapid dissemination of research findings. As a multidisciplinary journal, it welcomes contributions from biological, health, physical, chemical, Earth, social, mathematical, applied, and engineering sciences, aiming to highlight important breakthroughs within each domain.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信