Introduction to the BCF theory

IF 4.5 2区材料科学 Q1 CRYSTALLOGRAPHY

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI:10.1016/j.pcrysgrow.2016.04.002

Makio Uwaha

引用次数: 19

Abstract

Sixty-five years have passed since Burton, Cabrera and Frank (BCF) published the seminal paper (W. K. Burton, N. Cabrera and F. C. Frank, Phil. Trans. Royal Soc. London, 243 (1951), 299). Since then, the paper provided us the basic scheme of growth of crystals. In this lecture, the BCF theory is introduced for beginners as the basis of modern crystal growth study. The BCF theory explained the growth of facets with the help of screw dislocations. It introduced the concept of the roughening transition, which distinguishes the crucial difference of lateral growth of facets and normal growth of round surfaces.

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BCF理论简介

自Burton, Cabrera和Frank (BCF)发表开创性论文(W. K. Burton, N. Cabrera和F. C. Frank, Phil)以来，已经过去了65年。反式。皇家Soc。伦敦，243(1951)，299)。从那时起，论文为我们提供了晶体生长的基本方案。本讲座为初学者介绍BCF理论作为现代晶体生长研究的基础。BCF理论借助螺位错解释了晶面的生长。它引入了粗化过渡的概念，区分了切面的横向生长和圆形表面的法向生长的关键区别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学：表征与测试

CiteScore

8.80

自引率

2.00%

发文量

审稿时长

1 day

期刊介绍： Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.