Progress and prospects of GaN-based VCSEL from near UV to green emission

IF 7.4 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Hsin-chieh Yu , Zhi-wei Zheng , Yang Mei , Rong-bin Xu , Jian-ping Liu , Hui Yang , Bao-ping Zhang , Tien-chang Lu , Hao-chung Kuo
{"title":"Progress and prospects of GaN-based VCSEL from near UV to green emission","authors":"Hsin-chieh Yu ,&nbsp;Zhi-wei Zheng ,&nbsp;Yang Mei ,&nbsp;Rong-bin Xu ,&nbsp;Jian-ping Liu ,&nbsp;Hui Yang ,&nbsp;Bao-ping Zhang ,&nbsp;Tien-chang Lu ,&nbsp;Hao-chung Kuo","doi":"10.1016/j.pquantelec.2018.02.001","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic </span>chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using </span>quantum dots (QDs) active region to overcome the 'green gap'.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"57 ","pages":"Pages 1-19"},"PeriodicalIF":7.4000,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2018.02.001","citationCount":"46","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Quantum Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0079672718300016","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 46

Abstract

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.

氮化镓基VCSEL从近紫外到绿色发射的进展与展望
氮化镓是制造蓝、蓝紫和绿波段光电子器件的理想材料。垂直腔面发射激光器(VCSELs)具有许多优点,包括占地面积小,输出光束的圆形对称性,二维可扩展性和/或寻址性,表面贴装封装,良好的性价比以及用于输出耦合的简单光学/校准。在本文中,我们希望(1)回顾氮化镓基VCSEL的设计和制造,包括一些技术挑战,(2)讨论电泵浦蓝色VCSEL的设计和金属有机化学气相沉积(MOCVD)生长,以及(3)利用量子点(QDs)有源区来克服“绿隙”,展示世界上第一个绿色VCSEL。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Progress in Quantum Electronics
Progress in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
18.50
自引率
0.00%
发文量
23
审稿时长
150 days
期刊介绍: Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信