Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

IF 8.2 1区 化学 Q1 CHEMISTRY, PHYSICAL
R. Bergamaschini , F. Isa , C.V. Falub , P. Niedermann , E. Müller , G. Isella , H. von Känel , L. Miglio
{"title":"Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays","authors":"R. Bergamaschini ,&nbsp;F. Isa ,&nbsp;C.V. Falub ,&nbsp;P. Niedermann ,&nbsp;E. Müller ,&nbsp;G. Isella ,&nbsp;H. von Känel ,&nbsp;L. Miglio","doi":"10.1016/j.surfrep.2013.10.002","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>In this report we present a novel strategy in selective epitaxial growth on top of Si pillars, which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a maskless process. Modelling by </span>rate equations<span><span> the morphology evolution of fully facetted crystal profiles is extensively outlined, showing an excellent prediction of the peculiar role played by flux shielding among microcrystals, in the case of dense array configuration. </span>Crack formation<span> and substrate bending, caused by the mismatch in thermal expansion coefficients, are eliminated by the mechanical decoupling among individual microcrystals, which are also shown to be dislocation- and strain-free. The method has been also tested for Si</span></span></span><sub>1−<em>x</em></sub>Ge<sub><em>x</em></sub><span><span><span> alloys, with compositions<span> ranging from pure </span></span>silicon to pure </span>germanium. There are ample reasons to believe that this approach could be extended to other material combinations and substrate orientations, actually providing a technology platform for several device applications.</span></p></div>","PeriodicalId":434,"journal":{"name":"Surface Science Reports","volume":null,"pages":null},"PeriodicalIF":8.2000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.surfrep.2013.10.002","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Reports","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016757291300023X","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 40

Abstract

In this report we present a novel strategy in selective epitaxial growth on top of Si pillars, which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a maskless process. Modelling by rate equations the morphology evolution of fully facetted crystal profiles is extensively outlined, showing an excellent prediction of the peculiar role played by flux shielding among microcrystals, in the case of dense array configuration. Crack formation and substrate bending, caused by the mismatch in thermal expansion coefficients, are eliminated by the mechanical decoupling among individual microcrystals, which are also shown to be dislocation- and strain-free. The method has been also tested for Si1−xGex alloys, with compositions ranging from pure silicon to pure germanium. There are ample reasons to believe that this approach could be extended to other material combinations and substrate orientations, actually providing a technology platform for several device applications.

致密硅柱阵列上的自对准锗和锗三维外延
在本报告中,我们提出了一种在硅柱上选择性外延生长的新策略,该策略可以在无掩膜工艺中产生由自对准微米尺寸晶体组成的镶嵌状锗薄膜。通过速率方程建模,广泛地概述了全切面晶体轮廓的形态演变,显示了在密集阵列配置的情况下微晶体中通量屏蔽所起的特殊作用的极好预测。由热膨胀系数不匹配引起的裂纹形成和衬底弯曲通过单个微晶之间的机械解耦消除,并且显示出无位错和应变。该方法也被用于Si1−xGex合金,其成分从纯硅到纯锗不等。有充分的理由相信,这种方法可以扩展到其他材料组合和衬底方向,实际上为多种器件应用提供了技术平台。
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来源期刊
Surface Science Reports
Surface Science Reports 化学-物理:凝聚态物理
CiteScore
15.90
自引率
2.00%
发文量
9
审稿时长
178 days
期刊介绍: Surface Science Reports is a journal that specializes in invited review papers on experimental and theoretical studies in the physics, chemistry, and pioneering applications of surfaces, interfaces, and nanostructures. The topics covered in the journal aim to contribute to a better understanding of the fundamental phenomena that occur on surfaces and interfaces, as well as the application of this knowledge to the development of materials, processes, and devices. In this journal, the term "surfaces" encompasses all interfaces between solids, liquids, polymers, biomaterials, nanostructures, soft matter, gases, and vacuum. Additionally, the journal includes reviews of experimental techniques and methods used to characterize surfaces and surface processes, such as those based on the interactions of photons, electrons, and ions with surfaces.
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