Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

IF 7.4 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohammed Zahed Mustafa Khan, Tien Khee Ng, Boon S. Ooi
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引用次数: 61

Abstract

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

自组装InAs/InP量子点和量子破折号:材料结构和器件
激光,电子和光子集成电路(EPIC),光互连以及调制技术的进步使当今社会能够拥抱宽带,高速互联网和移动网络连接的便利。然而,能源需求和带宽需求的急剧增长要求超紧凑型EPIC技术进一步创新。在光学领域,激光技术的进步已经超越了目前基于量子阱(Qwell)的激光技术,并呈现出非常有希望的结果。均匀生长量子点激光器和光放大器,可以作为未来节能信息通信技术(ICT)中通过光纤传输和放大信息的主力。在980 nm发射的零维(0D)结构中,以垂直腔面发射激光器(VCSEL)的形式,已经可以在低阈值电流密度下工作,并且能够以108 fJ/bit的速度实现40 Gbps的无错误传输。在O波段、C波段、L波段、u波段及其他波段工作的激光器和放大器的后续成果将最终为绿色ICT奠定基础。另一方面,非均匀生长的准0D量子冲刺(Qdash)激光器是服务器场或接入网中潜在的宽带连接的出色解决方案。在受激发射模式下工作的单个宽带Qdash激光器可以取代密集波分复用(DWDM)传输中的数十个离散窄带激光器,从而进一步节省能源,成本和占地面积。本文从生长和器件性能的角度综述了基于InAs/InGaAlAs/InP和InAs/InGaAsP/InP材料体系的Qdots和Qdash器件的研究进展。我们特别讨论了激光器、半导体光放大器(SOA)、锁模激光器和超发光二极管的进展,这些都是EPIC和ICT的基石。另外,这些光源是其他多学科领域应用的潜在候选者。
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来源期刊
Progress in Quantum Electronics
Progress in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
18.50
自引率
0.00%
发文量
23
审稿时长
150 days
期刊介绍: Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
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