Strained-layer quantum well materials grown by MOCVD for diode laser application

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics Pub Date : 2021-01-01 DOI:10.1016/j.pquantelec.2020.100303

Luke J. Mawst , Honghyuk Kim , Gary Smith , Wei Sun , Nelson Tansu

引用次数: 7

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用MOCVD生长用于二极管激光器的应变层量子阱材料

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Progress in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

18.50

自引率

0.00%

发文量

审稿时长

150 days

期刊介绍： Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.