Chip-scale GaN integration

IF 7.4 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
K.H. Li, W.Y. Fu, H.W. Choi
{"title":"Chip-scale GaN integration","authors":"K.H. Li,&nbsp;W.Y. Fu,&nbsp;H.W. Choi","doi":"10.1016/j.pquantelec.2020.100247","DOIUrl":null,"url":null,"abstract":"<div><p><span>Blue LEDs<span><span> and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, </span>optoelectronic, and </span></span>optical components based on GaN are discussed.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":7.4000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100247","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Quantum Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S007967272030001X","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 27

Abstract

Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed.

芯片级GaN集成
基于iii -氮化物的蓝色led和hemt已经在全球范围内蓬勃发展,这在很大程度上要归功于20世纪90年代宽带隙化合物半导体材料质量的突破。白光led、蓝光系统的实现,以及最近高效的紧凑型充电器已经彻底改变了我们的生活方式,并为全球节能努力做出了巨大贡献。现代离散型氮化镓器件的成熟和多样性为具有扩展功能和应用的集成氮化镓平台提供了机会。在这篇综述文章中,我们提出了GaN器件和组件的单片和异构集成的概述。讨论了基于GaN的电子、光电和光学元件集成的各种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Progress in Quantum Electronics
Progress in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
18.50
自引率
0.00%
发文量
23
审稿时长
150 days
期刊介绍: Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
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