Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics Pub Date : 2021-01-01 DOI:10.1016/j.pquantelec.2020.100304

P. Daniel Dapkus , Chun Yung Chi , Sang Jun Choi , Hyung Joon Chu , Mitchell Dreiske , Rijuan Li , Yenting Lin , Yoshitake Nakajima , Dawei Ren , Ryan Stevenson , Maoqing Yao , Ting Wei Yeh , Hanmin Zhao

引用次数: 5

Abstract

Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is made. Throughout, the pioneering work led by Professor James J. Coleman is used to illustrate the value of using selective growth for various applications.

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金属有机化学气相沉积的选择性区域外延——光子与新型纳米结构集成的工具

本文综述了金属有机化学气相沉积的III-V材料和器件的选择性区域外延(SAE)生长，以说明该技术中所采用的概念及其最相关的应用。重点介绍了SAE在光子集成、与光子集成相关的材料异质集成、纳米结构集成等方面的应用。在整个过程中，詹姆斯·j·科尔曼教授领导的开创性工作被用来说明在各种应用中使用选择性生长的价值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Progress in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

18.50

自引率

0.00%

发文量

审稿时长

150 days

期刊介绍： Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.