Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY
Andreas Beyer, Wolfgang Stolz, Kerstin Volz
{"title":"Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics","authors":"Andreas Beyer,&nbsp;Wolfgang Stolz,&nbsp;Kerstin Volz","doi":"10.1016/j.pcrysgrow.2015.10.002","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the </span>metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several </span>metastable materials<span><span>. Mainly examples for Metal Organic Vapor Phase Epitaxy<span> (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, </span></span>nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"61 2","pages":"Pages 46-62"},"PeriodicalIF":4.5000,"publicationDate":"2015-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2015.10.002","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897415000145","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 15

Abstract

III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several metastable materials. Mainly examples for Metal Organic Vapor Phase Epitaxy (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions.

亚稳立方锌-闪锌矿III/V半导体:生长与结构特性
具有立方锌-闪锌矿晶体结构的III/V半导体,如GaAs, GaP或InP,如果合金原子的共价半径明显小于或大于基体原子,则成为亚稳的。例如在上述材料中掺入硼、氮和铋。由此产生的多化合物半导体,例如(Ga,In)(N,As), Ga(N,As,P)和Ga(As,Bi),在一些新的应用中非常有趣。然而,生长条件必须与材料体系的亚稳态相适应。此外,可以发生不同于稳定材料的结构形成。本文综述了几种亚稳材料的生长特性。给出了金属有机气相外延(MOVPE)的主要实例。将MOVPE的生长特性与选择的使用分子束外延生长的例子进行比较,以突出所观察到的生长特性是所研究的亚稳材料体系的固有特性。此外,还总结了生长和生长中断过程中出现的稀硼化物、氮化物和双化物的结构特点,并将其与生长条件联系起来。
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来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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