Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY
Hilde Hardtdegen , Martin Mikulics , Sally Rieß , Martin Schuck , Tobias Saltzmann , Ulrich Simon , Massimo Longo
{"title":"Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system","authors":"Hilde Hardtdegen ,&nbsp;Martin Mikulics ,&nbsp;Sally Rieß ,&nbsp;Martin Schuck ,&nbsp;Tobias Saltzmann ,&nbsp;Ulrich Simon ,&nbsp;Massimo Longo","doi":"10.1016/j.pcrysgrow.2015.10.001","DOIUrl":null,"url":null,"abstract":"<div><p>This report centers on different modern chemical synthesis methods suitable for production with which low-dimensional crystalline structures are attainable in the Ge–Sb–Te material system. The general characteristics of the methods are described first. The special challenges are discussed for the Ge–Sb–Te material system. Growth optimization is studied, and the resulting nanostructures are presented. At last a comparison of the methods is given with respect to research scale vapor transport approach on the one hand and the potential described for future application in technology on the other hand.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":null,"pages":null},"PeriodicalIF":4.5000,"publicationDate":"2015-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2015.10.001","citationCount":"47","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897415000133","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 47

Abstract

This report centers on different modern chemical synthesis methods suitable for production with which low-dimensional crystalline structures are attainable in the Ge–Sb–Te material system. The general characteristics of the methods are described first. The special challenges are discussed for the Ge–Sb–Te material system. Growth optimization is studied, and the resulting nanostructures are presented. At last a comparison of the methods is given with respect to research scale vapor transport approach on the one hand and the potential described for future application in technology on the other hand.

Ge-Sb-Te材料体系低维相变结构的现代化学合成方法
本报告集中介绍了不同的现代化学合成方法,这些方法适用于在Ge-Sb-Te材料体系中获得低维晶体结构的生产。首先描述了这些方法的一般特点。讨论了Ge-Sb-Te材料体系面临的特殊挑战。研究了生长优化,并给出了纳米结构。最后对研究尺度蒸汽输运方法进行了比较,并对未来的技术应用前景进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信