Two-dimensional analysis on the magnetic field adjusted electrical behaviors in composite semiconductor structures

Abstract

To explore the exact electric properties and reveal the intrinsic interaction mechanisms among multi-fields in composite magneto-electric-semiconductor structures, two-dimensional analyses are performed based on the coupled field theory. Expanding the basic physical quantities to Fourier series along the length, the governing equations are simplified. And then, the discrete solutions are derived by utilizing differential quadrature method. As applications, three composite structures are designed via considering different poling directions. Respectively, the extension, piecewise deformation and bending are realized. Before analysis, the convergence and correctness of adopted method are discussed systematically. In numerical calculation, the effect of material proportion on the perturbation carrier density is investigated. It is found the variation rule of perturbation carrier density is controlled by material proportion and deformation form simultaneously. Importantly, there are optimal material proportion ranges producing the carriers, nevertheless, the ranges are different for three structures. Additionally, two-dimensional distributions of perturbation carrier density, electric field, electric displacement and polarization are discussed. Along the thickness, the field quantities are symmetric for extension and piecewise deformation, but is antisymmetric for bending. Specially, in the structure with piecewise deformation, the potential barriers are realized. This work could be the guidance designing magneto-electric devices.