Enhanced Electrocaloric Performance in NaNbO3-Based Ferrodistortive Relaxors by Regulating Oxygen Octahedra Configuration and Domain Structure

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-14 DOI:10.1021/acsaelm.6c01747
Wenhao Wang, Wen He, Chunchang Wang, Feng Li
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引用次数: 0

Abstract

As an alternative to traditional vapor-compression refrigeration, electrocaloric (EC) cooling features high efficiency, convenient miniaturization, and integration. The paradox of simultaneously realizing a high adiabatic temperature change (ΔT) and temperature stability is hardly resolved in conventional relaxors, thus hindering further applications. Emerging NaNbO3-based ferrodistortive relaxors are poised to achieve the goal of the “best of both worlds”. In this work, (0.82 – x)NaNbO3–0.18BaTiO3–xBaSnO3 (x = 0, 0.01, and 0.02) compositions are designed. Results demonstrate that BaSnO3 doping effectively regulates the oxygen octahedral tilt (OOT) degree, improves lattice structural stability, and facilitates the transition of long-to-short order polar nanodomains. These are verified by micro/local structure characterizations of Rietveld refinements, transmission electron microscopy, and piezoelectric force microscopy. Such evolution establishes a robust OOT framework and highly correlated slush polar nanodomains. This endows x = 0.01 and 0.02 compositions with a maximal ΔT of 0.70/0.55 K at an electric field of 10 kV/mm and an ultrawide temperature span of 99/104 K, respectively, which is superior to most lead-based and lead-free counterparts. Notably, a comprehensive physical panorama of OOT configuration, domain structure, and EC performances is covered. This work provides a useful compositional extension for designing high-performance EC devices.

通过调节氧八面体结构和畴结构来增强纳米硼基铁扭曲弛豫器的电热性能
电热制冷作为传统蒸汽压缩制冷的替代方案,具有效率高、小型化方便、集成化方便等特点。同时实现高绝热温度变化(ΔT)和温度稳定性的矛盾在传统弛豫剂中很难解决,从而阻碍了进一步的应用。新兴的基于nanbo3的铁扭曲弛豫器有望实现“两全其美”的目标。在这项工作中,设计了(0.82 - x) NaNbO3-0.18BaTiO3-xBaSnO3 (x = 0,0.01和0.02)组合物。结果表明,掺杂BaSnO3能有效调节氧八面体倾斜度,提高晶格结构稳定性,促进长序极性纳米畴向短序极性纳米畴的转变。这些都是通过Rietveld细化,透射电子显微镜和压电力显微镜的微观/局部结构表征来验证的。这种进化建立了一个强大的OOT框架和高度相关的泥浆极性纳米结构域。这使得x = 0.01和0.02的组合物在10 kV/mm电场下的最大ΔT为0.70/0.55 K,超宽温度范围为99/104 K,优于大多数铅基和无铅的组合物。值得注意的是,它涵盖了OOT配置、领域结构和EC性能的全面物理全景。这项工作为设计高性能电子元件提供了有益的组合扩展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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