Programmable Organic Light‐Emitting Transistors Enabled by Floating‐Gate Charge Storage

Abstract

Display technologies for high‐resolution smartphones, wearable screens and near‐eye VR/AR microdisplays increasingly require compact pixel architectures with high aperture ratios. Organic light‐emitting transistors (OLETs) improve functional integration by combining transistor switching and electroluminescence within a single device. However, conventional OLETs still define emission states through instantaneous electrical bias, leaving state storage separated from light emission. The absence of memory‐emission co‐location limits intrinsic state programmability in OLET‐based pixel devices. Here, we report programmable organic light‐emitting transistors (P‐OLETs) based on a floating‐gate architecture, in which charge storage enables reversible charge trapping and release, producing programmable switching behavior and tunable electroluminescence. The stored charge modulates channel transport and light emission, allowing electrical programming to define persistently retained optical states. Optimized P‐OLETs exhibit a large memory window of 27.07 V, stable luminance retention over 5000 s, and reliable endurance over 100 program/erase cycles. Floating‐gate charge storage shifts OLET operation from bias‐defined emission toward charge‐state defined emission and establishes a memory‐emission integrated device architecture. This work introduces programmable state‐retentive emission as a compact operating concept for programmable optoelectronics and reconfigurable display systems.