C-plane yellow–green InGaN micro-light-emitting diodes with 1.55 GHz modulation bandwidth for free-space visible-light communication

IF 3.8 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2026-10-12 DOI:10.1063/5.0346978

Jianhui Liu,Hongjian Li,Guanqi Li,Chunyu Liu,Yang Su,Yunpeng Ge,Zihan Xia,Ahmad Shuhaimi,Jinchai Li,Zhaoxia Bi,Panpan Li,Kai Huang,Rong Zhang

{"title":"C-plane yellow–green InGaN micro-light-emitting diodes with 1.55 GHz modulation bandwidth for free-space visible-light communication","authors":"Jianhui Liu,Hongjian Li,Guanqi Li,Chunyu Liu,Yang Su,Yunpeng Ge,Zihan Xia,Ahmad Shuhaimi,Jinchai Li,Zhaoxia Bi,Panpan Li,Kai Huang,Rong Zhang","doi":"10.1063/5.0346978","DOIUrl":null,"url":null,"abstract":"Yellow–green InGaN micro-light-emitting diodes (micro-LEDs) are attractive transmitters for visible-light communication, yet high-In-content quantum wells usually impose a trade-off among efficiency, optical power, and modulation speed. Here, we report c-plane single-quantum-well InGaN micro-LEDs emitting near 545 nm that combine milliwatt-level output at high-current density with gigahertz-class small-signal modulation. Devices with lateral sizes of 40 and 60 μm exhibit peak external quantum efficiencies (EQEs) of 5.36% and 5.35%, respectively, and retain EQEs of 2.84% and 2.83% at 1000 A cm−2. The 40 μm device reaches a maximum −3dB bandwidth of 1.55 GHz and maintains gigahertz-class bandwidth from a high operation temperature (300–375 K). We also demonstrate 2.0 Gbit/s free-space non-return-to-zero on–off keying transmission with an estimated bit-error rate below the 7% overhead hard-decision forward-error-correction limit. These results show that c-plane yellow–green InGaN micro-LEDs can provide compact, efficient, and thermally robust transmitters for high-speed free-space visible-light links.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"63 1","pages":""},"PeriodicalIF":3.8000,"publicationDate":"2026-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0346978","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Yellow–green InGaN micro-light-emitting diodes (micro-LEDs) are attractive transmitters for visible-light communication, yet high-In-content quantum wells usually impose a trade-off among efficiency, optical power, and modulation speed. Here, we report c-plane single-quantum-well InGaN micro-LEDs emitting near 545 nm that combine milliwatt-level output at high-current density with gigahertz-class small-signal modulation. Devices with lateral sizes of 40 and 60 μm exhibit peak external quantum efficiencies (EQEs) of 5.36% and 5.35%, respectively, and retain EQEs of 2.84% and 2.83% at 1000 A cm−2. The 40 μm device reaches a maximum −3dB bandwidth of 1.55 GHz and maintains gigahertz-class bandwidth from a high operation temperature (300–375 K). We also demonstrate 2.0 Gbit/s free-space non-return-to-zero on–off keying transmission with an estimated bit-error rate below the 7% overhead hard-decision forward-error-correction limit. These results show that c-plane yellow–green InGaN micro-LEDs can provide compact, efficient, and thermally robust transmitters for high-speed free-space visible-light links.

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用于自由空间可见光通信的c平面黄绿色InGaN微发光二极管，调制带宽为1.55 GHz

黄绿色InGaN微发光二极管（micro- led）是可见光通信的有吸引力的发射器，但高in含量的量子阱通常需要在效率、光功率和调制速度之间进行权衡。在这里，我们报道了c平面单量子阱InGaN微型led，其发光距离接近545 nm，结合了毫瓦级高电流密度输出和千兆赫级小信号调制。横向尺寸为40 μm和60 μm的器件的峰值外量子效率（EQEs）分别为5.36%和5.35%，在1000 A cm−2时EQEs保持在2.84%和2.83%。40 μm器件最大带宽为1.55 GHz，可在高工作温度（300-375 K）下保持千兆赫级带宽。我们还演示了2.0 Gbit/s自由空间非归零开关键控传输，估计误码率低于7%开销硬决策前向纠错限制。这些结果表明，c平面黄绿色InGaN微型led可以为高速自由空间可见光链路提供紧凑，高效和热稳健的发射器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.