Cr2O3/β-Ga2O3 heterojunction diodes with orientation-dependent breakdown electric field

IF 3.8 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2026-10-12 DOI:10.1063/5.0348039

Yizheng Liu,Haochen Wang,Carl Peterson,James S. Speck,Chris G. Van de Walle,Sriram Krishnamoorthy

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Abstract

We report the fabrication of Cr2O3/β-Ga2O3 heterojunction diodes (HJDs) using reactive magnetron sputtering of Cr2O3 on highly doped β-Ga2O3 bulk substrates along (100), (010), (001), (110), and (011) orientation dependence of high electric field handling capability in β-Ga2O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga2O3 were computed by using first-principles calculation methods for accurate apparent charge density (ND–NA) extraction and breakdown electric field analysis from capacitance–voltage measurements. The HJDs fabricated on n+ (110) exhibited breakdown electric fields >10 MV/cm up to 12.9 MV/cm, showing the highest experimentally observed parallel-plane junction electric field among β-Ga2O3-based junctions. Breakdown electric fields among (100), (010), (001), and (011) orientations showed distinct distribution in the range of 5.13–5.26, 5.10–7.05, 2.70–3.33, and 3.88–4.38 MV/cm, respectively, validating the orientational dependence of parallel-plane junction electric field at breakdown in low-symmetry monoclinic β-Ga2O3. The parallel-plane breakdown electric fields (EBr,ǁ) reported in this work were extracted when the device experienced breakdown at 100 mA/cm2 current density compliance, and should not be confused with critical electric field (Ec) as a function of drift layer doping concentration, which accounts for electric-field dependent impact ionization coefficients in Si, SiC, and GaN. This study can guide the choice of crystal orientation for high-performance gallium oxide-based devices that require high electric field handling capability.

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具有定向击穿电场的Cr2O3/β-Ga2O3异质结二极管

我们报道了利用反应磁控溅射Cr2O3在高掺杂β-Ga2O3块状衬底上沿（100）、（010）、（001）、（110）和（011）方向制备Cr2O3/β-Ga2O3异质结二极管（HJDs）。利用第一性原理计算方法对β-Ga2O3在（110）和（011）取向上的相对介电常数进行了精确的表观电荷密度（ND-NA）提取和击穿电场分析。在n+(110)上制备的HJDs表现出击穿电场；在10 MV/cm ~ 12.9 MV/cm之间，表现出在β- ga2o3基结中实验观察到的最高平行平面结电场。（100）、（010）、（001）和（011）取向击穿电场分别在5.13 ~ 5.26、5.10 ~ 7.05、2.70 ~ 3.33和3.88 ~ 4.38 MV/cm范围内有明显的分布，验证了低对称单斜β-Ga2O3击穿时平行平面结电场的取向依赖性。本文报道的平行平面击穿电场（EBr,）是在器件在100 mA/cm2电流密度下发生击穿时提取的，不应与作为漂移层掺杂浓度函数的临界电场（Ec）相混淆，该函数解释了Si， SiC和GaN中电场依赖的影响电离系数。该研究可以指导需要高电场处理能力的高性能氧化镓基器件的晶体取向选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.