Investigations of third order nonlinear optical properties and density functional theory (DFT)-based computational analysis of optical properties for undoped and Sr-doped ZnO thin films
IF 4 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
In this work, we report the synthesis, characterization, and comprehensive investigation of third-order nonlinear optical properties of Sr-doped ZnO thin films (0-6 wt% Sr) fabricated via sol-gel spin coating. The structural analysis confirmed the wurtzite crystal structure with c-axis orientation and increased porosity at higher doping levels. Z-scan measurements at 532 nm revealed that Sr doping systematically enhances both nonlinear absorption and refraction, with the nonlinear absorption coefficient increasing from 0.94 × 10-2 to 4.89 × 10-2 cm/W and the nonlinear refractive index (n2) increasing in magnitude from -8.97 × 10-8 to -4.42 × 10-6 cm2/W. The observed reverse saturation absorption and self-defocusing behavior, confirmed by the pre-focal peak and post-focal valley configuration in closed-aperture Z-scan, indicates negative nonlinearity suitable for optical limiting. DFT calculations using the MBJ potential validated the experimental trends, showing increased band gap (3.2 to 3.4 eV) and enhanced density of states near the conduction band due to the Burstein-Moss effect, which facilitates two-photon absorption. The systematic enhancement of the real and imaginary parts of the third-order susceptibility with Sr doping confirms the effectiveness of Sr incorporation for tailoring nonlinear optical properties. These findings demonstrate that Sr-doped ZnO thin films are promising candidates for all-optical photonic devices, optical limiters, and switches operating at 532 nm, with the doping concentration providing a practical handle for optimizing performance.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.