Investigations of third order nonlinear optical properties and density functional theory (DFT)-based computational analysis of optical properties for undoped and Sr-doped ZnO thin films

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Getu Endale, Devendra Mohan
{"title":"Investigations of third order nonlinear optical properties and density functional theory (DFT)-based computational analysis of optical properties for undoped and Sr-doped ZnO thin films","authors":"Getu Endale,&nbsp;Devendra Mohan","doi":"10.1007/s11082-026-09196-2","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we report the synthesis, characterization, and comprehensive investigation of third-order nonlinear optical properties of Sr-doped ZnO thin films (0-6 wt% Sr) fabricated via sol-gel spin coating. The structural analysis confirmed the wurtzite crystal structure with c-axis orientation and increased porosity at higher doping levels. Z-scan measurements at 532 nm revealed that Sr doping systematically enhances both nonlinear absorption and refraction, with the nonlinear absorption coefficient increasing from 0.94 × 10<sup>-2</sup> to 4.89 × 10<sup>-2</sup> cm/W and the nonlinear refractive index (n<sub>2</sub>) increasing in magnitude from -8.97 × 10<sup>-8</sup> to -4.42 × 10<sup>-6</sup> cm<sup>2</sup>/W. The observed reverse saturation absorption and self-defocusing behavior, confirmed by the pre-focal peak and post-focal valley configuration in closed-aperture Z-scan, indicates negative nonlinearity suitable for optical limiting. DFT calculations using the MBJ potential validated the experimental trends, showing increased band gap (3.2 to 3.4 eV) and enhanced density of states near the conduction band due to the Burstein-Moss effect, which facilitates two-photon absorption. The systematic enhancement of the real and imaginary parts of the third-order susceptibility with Sr doping confirms the effectiveness of Sr incorporation for tailoring nonlinear optical properties. These findings demonstrate that Sr-doped ZnO thin films are promising candidates for all-optical photonic devices, optical limiters, and switches operating at 532 nm, with the doping concentration providing a practical handle for optimizing performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 12","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-026-09196-2","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

In this work, we report the synthesis, characterization, and comprehensive investigation of third-order nonlinear optical properties of Sr-doped ZnO thin films (0-6 wt% Sr) fabricated via sol-gel spin coating. The structural analysis confirmed the wurtzite crystal structure with c-axis orientation and increased porosity at higher doping levels. Z-scan measurements at 532 nm revealed that Sr doping systematically enhances both nonlinear absorption and refraction, with the nonlinear absorption coefficient increasing from 0.94 × 10-2 to 4.89 × 10-2 cm/W and the nonlinear refractive index (n2) increasing in magnitude from -8.97 × 10-8 to -4.42 × 10-6 cm2/W. The observed reverse saturation absorption and self-defocusing behavior, confirmed by the pre-focal peak and post-focal valley configuration in closed-aperture Z-scan, indicates negative nonlinearity suitable for optical limiting. DFT calculations using the MBJ potential validated the experimental trends, showing increased band gap (3.2 to 3.4 eV) and enhanced density of states near the conduction band due to the Burstein-Moss effect, which facilitates two-photon absorption. The systematic enhancement of the real and imaginary parts of the third-order susceptibility with Sr doping confirms the effectiveness of Sr incorporation for tailoring nonlinear optical properties. These findings demonstrate that Sr-doped ZnO thin films are promising candidates for all-optical photonic devices, optical limiters, and switches operating at 532 nm, with the doping concentration providing a practical handle for optimizing performance.

三阶非线性光学性质研究及基于密度泛函理论(DFT)的未掺杂和掺锶ZnO薄膜光学性质计算分析
在这项工作中,我们报告了溶胶-凝胶自旋涂层制备的Sr掺杂ZnO薄膜(0-6 wt% Sr)的合成,表征和三阶非线性光学性质的全面研究。结构分析证实,在高掺杂水平下,纤锌矿晶体结构呈c轴取向,孔隙率增加。在532 nm处的z扫描测量结果表明,Sr掺杂系统地增强了非线性吸收和折射,非线性吸收系数从0.94 × 10-2增加到4.89 × 10-2 cm/W,非线性折射率(n2)从-8.97 × 10-8增加到-4.42 × 10-6 cm2/W。闭孔径z扫描的焦前峰和焦后谷结构证实了所观察到的反向饱和吸收和自离焦行为,表明适合于光限的负非线性。使用MBJ势的DFT计算验证了实验趋势,显示出由于Burstein-Moss效应,导带附近的带隙增加(3.2至3.4 eV)和态密度增强,这有利于双光子吸收。Sr掺杂系统地增强了三阶磁化率的实部和虚部,证实了Sr掺杂对调整非线性光学性质的有效性。这些发现表明,sr掺杂ZnO薄膜是全光光子器件、光限制器和532 nm开关的有希望的候选者,掺杂浓度为优化性能提供了一个实用的处理方法。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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