{"title":"Tuning the structural and optoelectronic properties of Cs3Bi2I9 through MA+/FA+ incorporation","authors":"Mohit Singh, J. P. Tiwari","doi":"10.1007/s10854-026-18625-7","DOIUrl":null,"url":null,"abstract":"<div><p>Bismuth-based halide perovskites have emerged as promising lead-free alternatives to conventional Pb-based optoelectronic materials because of their low toxicity, enhanced environmental compatibility, and superior chemical stability. Growing concerns regarding the toxicity and long-term instability of lead halide perovskites have accelerated research into environmentally benign perovskite materials. Amongst these, the vacancy-ordered inorganic perovskite Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> has attracted considerable attention owing to its excellent moisture resistance, thermal stability, and non-toxic nature. In this work, pristine and MA<sup>+</sup>/FA<sup>+</sup> simultaneously co-doped Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> perovskites were successfully synthesized and systematically investigated. Structural analysis confirmed the formation of the crystalline perovskite phase, revealed slight structural modifications upon doping, and examined the surface morphology and grain distribution. Optical studies show tuneable absorption behaviour, with bandgap and Urbach energy reductions from ~2.09 to ~1.95 eV and ~0.180 to ~0.094 eV with increasing organic cation concentration. Raman spectra indicate changes in vibrational modes associated with structural interactions between organic cations and the inorganic structure. Thermal stability indicates the robustness of the perovskite, and I-V characteristics and space-charge-limited current (SCLC) measurements revealed increased mobility from ~6.95 × 10<sup>–5</sup> to ~1.94 × 10<sup>–4</sup> cm<sup>2</sup> V<sup>−1</sup> S<sup>−1</sup>, reduced trap density, and enhanced conductivity after doping. These results demonstrate that MA<sup>+</sup>/FA<sup>+</sup> simultaneous co-doping effectively tailors the structural, optical, thermal, and electrical properties of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>, providing an effective strategy for enhancing the performance of lead-free bismuth-based perovskites for future optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 29","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-026-18625-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Bismuth-based halide perovskites have emerged as promising lead-free alternatives to conventional Pb-based optoelectronic materials because of their low toxicity, enhanced environmental compatibility, and superior chemical stability. Growing concerns regarding the toxicity and long-term instability of lead halide perovskites have accelerated research into environmentally benign perovskite materials. Amongst these, the vacancy-ordered inorganic perovskite Cs3Bi2I9 has attracted considerable attention owing to its excellent moisture resistance, thermal stability, and non-toxic nature. In this work, pristine and MA+/FA+ simultaneously co-doped Cs3Bi2I9 perovskites were successfully synthesized and systematically investigated. Structural analysis confirmed the formation of the crystalline perovskite phase, revealed slight structural modifications upon doping, and examined the surface morphology and grain distribution. Optical studies show tuneable absorption behaviour, with bandgap and Urbach energy reductions from ~2.09 to ~1.95 eV and ~0.180 to ~0.094 eV with increasing organic cation concentration. Raman spectra indicate changes in vibrational modes associated with structural interactions between organic cations and the inorganic structure. Thermal stability indicates the robustness of the perovskite, and I-V characteristics and space-charge-limited current (SCLC) measurements revealed increased mobility from ~6.95 × 10–5 to ~1.94 × 10–4 cm2 V−1 S−1, reduced trap density, and enhanced conductivity after doping. These results demonstrate that MA+/FA+ simultaneous co-doping effectively tailors the structural, optical, thermal, and electrical properties of Cs3Bi2I9, providing an effective strategy for enhancing the performance of lead-free bismuth-based perovskites for future optoelectronic applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.