Tuning the structural and optoelectronic properties of Cs3Bi2I9 through MA+/FA+ incorporation

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohit Singh, J. P. Tiwari
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引用次数: 0

Abstract

Bismuth-based halide perovskites have emerged as promising lead-free alternatives to conventional Pb-based optoelectronic materials because of their low toxicity, enhanced environmental compatibility, and superior chemical stability. Growing concerns regarding the toxicity and long-term instability of lead halide perovskites have accelerated research into environmentally benign perovskite materials. Amongst these, the vacancy-ordered inorganic perovskite Cs3Bi2I9 has attracted considerable attention owing to its excellent moisture resistance, thermal stability, and non-toxic nature. In this work, pristine and MA+/FA+ simultaneously co-doped Cs3Bi2I9 perovskites were successfully synthesized and systematically investigated. Structural analysis confirmed the formation of the crystalline perovskite phase, revealed slight structural modifications upon doping, and examined the surface morphology and grain distribution. Optical studies show tuneable absorption behaviour, with bandgap and Urbach energy reductions from ~2.09 to ~1.95 eV and ~0.180 to ~0.094 eV with increasing organic cation concentration. Raman spectra indicate changes in vibrational modes associated with structural interactions between organic cations and the inorganic structure. Thermal stability indicates the robustness of the perovskite, and I-V characteristics and space-charge-limited current (SCLC) measurements revealed increased mobility from ~6.95 × 10–5 to ~1.94 × 10–4 cm2 V−1 S−1, reduced trap density, and enhanced conductivity after doping. These results demonstrate that MA+/FA+ simultaneous co-doping effectively tailors the structural, optical, thermal, and electrical properties of Cs3Bi2I9, providing an effective strategy for enhancing the performance of lead-free bismuth-based perovskites for future optoelectronic applications.

通过MA+/FA+掺入调整Cs3Bi2I9的结构和光电子性能
铋基卤化物钙钛矿因其低毒性、增强的环境兼容性和优越的化学稳定性而成为传统铅基光电材料的无铅替代品。对卤化铅钙钛矿的毒性和长期不稳定性的日益关注加速了对环境无害的钙钛矿材料的研究。其中,空位有序无机钙钛矿Cs3Bi2I9因其优异的耐湿性、热稳定性和无毒性而备受关注。在这项工作中,成功合成了原始和MA+/FA+同时共掺杂的Cs3Bi2I9钙钛矿,并对其进行了系统的研究。结构分析证实了结晶钙钛矿相的形成,发现掺杂后结构发生了轻微的变化,并对表面形貌和晶粒分布进行了检测。光学研究表明,随着有机阳离子浓度的增加,带隙和乌尔巴赫能量从~2.09 eV降低到~1.95 eV,从~0.180 eV降低到~0.094 eV。拉曼光谱显示了与有机阳离子和无机结构相互作用有关的振动模式的变化。热稳定性表明钙钛矿的坚固性,I-V特性和空间电荷限制电流(SCLC)测量表明,掺杂后钙钛矿的迁移率从~6.95 × 10-5增加到~1.94 × 10-4 cm2 V−1 S−1,降低了陷阱密度,增强了电导率。这些结果表明,MA+/FA+同时共掺杂有效地调整了Cs3Bi2I9的结构、光学、热学和电学性能,为提高无铅铋基钙钛矿的性能提供了一种有效的策略,可用于未来的光电应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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