Optimizing thermoelectric efficiency: enhanced properties of gallium-doped indium oxide for advanced energy harvesting applications

Abstract

To optimize the thermoelectric performance of indium oxide, this study explores the regulatory effect of Ga doping on its structure and multiple properties. Ga doping can effectively regulate the electronic and microstructure of indium oxide, increasing carrier concentration, density of states near the Fermi level and electrical conductivity, while decreasing carrier mobility and the absolute value of Seebeck coefficient. The enhancement effect of electrical conductivity dominates, promoting the improvement of power factor. Meanwhile, Ga doping suppresses phonon transport, reduces total thermal conductivity and lattice thermal conductivity, and decreases heat loss. In terms of mechanical properties, Young’s modulus decreases to improve toughness, and Vickers hardness increases to enhance mechanical stability. In summary, Ga doping significantly improves the ZT value of the material by synergistically regulating electrical, thermal and mechanical properties, providing reference for the design and preparation of high-performance indium oxide-based thermoelectric materials.