S-scheme CdS/Ag/V2O5 heterostructure for efficient visible-light-driven hydrogen production

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Guangling Zuo, Xianzhou Cao, Hongyong Ye, Jia Du, Xin Ding
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引用次数: 0

Abstract

To address the limited activity and stability of V2O5 (VO) in photocatalytic H2 evolution, an S-scheme heterojunction photocatalyst, denoted as CS/Ag/VO, was developed by loading CdS (CS) onto Ag-decorated VO (Ag/VO) through a two-step hydrothermal–solvothermal route. The structural and optical properties of the as-prepared catalysts were systematically characterized, and their photocatalytic H2 evolution performance was evaluated using TEOA as a sacrificial electron donor and in situ-generated Pt0 as a cocatalyst. The results show that Ag is present as highly dispersed nanoparticles and that CS is uniformly immobilized on the Ag/VO surface, which establishes intimate interfacial contact among the three components. Remarkably, the optimal CS/Ag/VO composite delivered a superior H2 yield of 9634 μmol·g−1 under visible light—5.29, 3.82, and 1.82 times greater than that of individual VO, CS, and Ag/VO, respectively—while maintaining 86.3% of its initial activity over six cycles, exhibiting robust stability. X-ray photoelectron spectroscopy (XPS), Mott-Schottky (M-S), and electron spin resonance (ESR) analyses reveal that a built-in electric field (IEF) directed from CS to VO is formed at their interface. This IEF, along with band bending, facilitates the S-scheme charge migration pathway. In this mechanism, low-activity photogenerated electron–hole pairs (PEHP) recombine in the interfacial region, while the strongly reducing electrons (enriched in the conduction band (CB) of CS) and the strongly oxidizing holes (enriched in the valence band (VB) of VO) are preserved. These retained charges effectively drive proton reduction and sacrificial-agent oxidation, respectively, synergistically enhancing the photocatalytic H2 evolution performance. Furthermore, the material maintained high H2 evolution activity even in common water bodies such as tap water and river water under TEOA-assisted and Pt-cocatalyzed conditions, demonstrating its tolerance to real-water matrices and its potential for practical application in a sacrificial-agent-assisted system. This study provides a solid experimental basis and a valuable theoretical reference for designing high-efficiency, stable S-scheme heterojunction photocatalysts.

S-scheme CdS/Ag/V2O5异质结构用于高效可见光制氢
为了解决V2O5 (VO)在光催化析氢过程中活性和稳定性受限的问题,采用水热-溶剂热两步法将CdS (CS)加载到Ag修饰的VO (Ag/VO)上,制备了s型异质结光催化剂CS/Ag/VO。系统表征了所制备催化剂的结构和光学性质,并以TEOA为牺牲电子供体,原位生成的Pt0为助催化剂,对其光催化析氢性能进行了评价。结果表明,Ag以高度分散的纳米粒子形式存在,CS均匀地固定在Ag/VO表面,三者之间建立了密切的界面接触。优化后的CS/Ag/VO复合材料在可见光下H2产率为9634 μmol·g−1,分别是单独的VO、CS和Ag/VO的5.29、3.82和1.82倍,并且在6个循环中保持了86.3%的初始活性,具有较强的稳定性。x射线光电子能谱(XPS)、Mott-Schottky (M-S)和电子自旋共振(ESR)分析表明,在它们的界面处形成了从CS指向VO的内置电场(IEF)。这种IEF与能带弯曲一起促进了S-scheme电荷迁移途径。在该机制中,低活性光生电子空穴对(PEHP)在界面区重组,而强还原电子(富集于CS的导带(CB))和强氧化空穴(富集于VO的价带(VB))被保留。这些保留电荷分别有效地驱动质子还原和牺牲剂氧化,协同提高光催化析氢性能。此外,该材料在teoa辅助和pt共催化条件下,即使在自来水和河水等普通水体中也能保持较高的析氢活性,表明其对真实水基质的耐受性,以及在牺牲剂辅助体系中的实际应用潜力。该研究为设计高效、稳定的s型异质结光催化剂提供了坚实的实验基础和有价值的理论参考。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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