Analytical modelling of In0.25Ga0.75N nanowire HEMT utilizing FEM analysis and SRH recombination for breast cancer biomolecule

IF 2.8 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
N. Anbuselvan, L. Lee, Kah-Yoong Chan
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引用次数: 0

Abstract

This work establishes a finite element drift–diffusion framework that integrates polarization sheet charge boundary conditions and Shockley–Read–Hall (SRH) recombination to accurately model an InGaN nanowire HEMT biosensor. The formation of the two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) is a result of both spontaneous and piezoelectric polarization at the subband discontinuities of the InGaN/GaN interface. Analysis reveals that the overall effect of the 2DEG and 2DHG significantly influences the filling of quantum levels, with maximum sheet carrier charge densities of approximately 1.5 × 10⁻13 cm−2 occurring at a distance of 2 nm, followed by a secondary peak around 13.5 nm. The electrostatic potential assessments indicate a notable energy band bending of − 3.0 eV at 5 nm at the heterojunction interface. The sheet density is calculated using a combination of Schrödinger–Poisson equations and quantum-corrected drift–diffusion methods, which are then integrated over the confinement region. The biosensing mechanism is effectively incorporated as a surface charge density at the gate dielectric’s top boundary, resulting in a threshold voltage shift that is influenced by quantum, electrostatic effects and the charge density profile. The coupled system comprises Poisson’s equation along with continuity equations for both holes and electrons. This setup includes drift–diffusion currents and SRH recombination, while the interface jump conditions necessitate the inclusion of polarization charges. By meticulously parameterizing material properties such as subband offsets, effective sheet carrier densities, total polarization constants, mobilities and trap lifetimes, the simulation successfully reproduces Id–Vg characteristics, 2DEG/2DHG distributions, electrostatic effects, charge density profiles, as well as wave functions and wave probability density functions corresponding to quantum energy levels relevant to breast cancer-related biomolecular interactions. This comprehensive modelling framework lays the foundation for advancing the design and effectiveness of biosensors aimed at detecting critical biomolecular signals.

基于有限元分析和SRH重组的In0.25Ga0.75N纳米线HEMT对乳腺癌生物分子的分析建模
本工作建立了一个集成极化片电荷边界条件和Shockley-Read-Hall (SRH)重组的有限元漂移扩散框架,以精确模拟InGaN纳米线HEMT生物传感器。二维电子气(2DEG)和二维空穴气(2DHG)的形成是InGaN/GaN界面亚带不连续处自发极化和压电极化的结果。分析表明,2DEG和2DHG的总体效应显著影响量子能级的填充,最大载流子电荷密度约为1.5 × 10⁻13 cm−2,发生在距离2nm处,其次是13.5 nm左右的次峰。静电电位评估表明,异质结界面在5 nm处有明显的- 3.0 eV的能带弯曲。薄片密度的计算使用Schrödinger-Poisson方程和量子校正漂移扩散方法的组合,然后在约束区域上进行积分。生物传感机制有效地作为栅极电介质顶边界的表面电荷密度,导致阈值电压位移,该阈值电压位移受量子效应、静电效应和电荷密度分布的影响。耦合系统由泊松方程以及空穴和电子的连续方程组成。该装置包括漂移扩散电流和SRH复合,而界面跳跃条件需要包含极化电荷。通过精心参数化材料特性,如子带偏移量、有效载流子密度、总极化常数、迁移率和阱寿命,模拟成功地再现了Id-Vg特性、2DEG/2DHG分布、静电效应、电荷密度分布,以及与乳腺癌相关生物分子相互作用相关的量子能级对应的波函数和波概率密度函数。这种全面的建模框架为推进旨在检测关键生物分子信号的生物传感器的设计和有效性奠定了基础。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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