Optimization of electrical conductivity in poly(2-ethylaniline)/graphene-based nanocomposites via response surface methodology and DFT-based computational ınvestigation

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Duygu Anaklı, Mehtap Erşan, Savaş Kaya, Konstantin P. Katin
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引用次数: 0

Abstract

Conductive reduced graphene oxide–poly(2-ethylaniline) (RGO-g-PEAn) and few-layer graphene–PEAn (FLG-g-PEAn) nanocomposites were synthesised via graphene-assisted in situ polymerisation of 2-ethylaniline. The reactive surfaces of RGO and FLG facilitated oxidant-free polymerisation, highlighting the active role of graphene nanosheets during polymerisation and in the formation of conductive percolation networks that enhance charge transport. In this study, response surface methodology (RSM) of the central composite design (CCD) was employed to optimise the effects of two variables on the electrical conductivity of the nanocomposites. The variables in question were polymerisation time (2–10 days) and graphene-based nanomaterial loading (20–100 mg). RSM ascertained the optimum conditions in terms of polymerisation time and graphene loading: 4.353 days and 91.812 mg RGO for RGO-g-PEAn, and 5.548 days and 92.291 mg FLG for FLG-g-PEAn. Morphological analysis by transmission electron microscopy (TEM) revealed interfacial interactions between PEAn chains and graphene surfaces and the formation of interconnected conductive networks in the nanocomposites. RGO-g-PEAn and FLG-g-PEAn exhibited RSM-predicted electrical conductivities of 4.32 × 10−1 and 1.764 S cm−1, respectively, which were approximately six orders of magnitude higher than that of pristine PEAn (5.29 × 10−7 S cm−1) at the optimum conditions. Furthermore, density functional theory (DFT) calculations were performed to investigate the charge transfer capabilities of the synthesised composites, providing theoretical support for the experimentally observed structure–property relationships. The findings of this study demonstrate that a combination of graphene-assisted oxidant-free polymerisation, together with RSM optimisation and DFT analysis, provides an effective strategy for developing conductive PEAn/graphene nanocomposites for electronic applications.

基于响应面法和dft计算的聚(2-乙基苯胺)/石墨烯纳米复合材料电导率优化ınvestigation
通过石墨烯辅助2-乙基苯胺原位聚合,合成了导电还原氧化石墨烯-聚2-乙基苯胺(RGO-g-PEAn)和少层石墨烯-聚2-乙基苯胺(FLG-g-PEAn)纳米复合材料。还原氧化石墨烯和FLG的活性表面促进了无氧化剂聚合,突出了石墨烯纳米片在聚合过程和导电渗透网络形成中的积极作用,从而增强了电荷传输。本研究采用中心复合材料设计(CCD)的响应面法(RSM)来优化两个变量对纳米复合材料电导率的影响。所讨论的变量是聚合时间(2-10天)和石墨烯基纳米材料负载(20-100毫克)。RSM确定了聚合时间和石墨烯负载的最佳条件:RGO-g- pean为4.353天,RGO-g- pean为91.812 mg RGO; FLG-g- pean为5.548天,92.291 mg FLG。透射电镜(TEM)形态学分析揭示了PEAn链与石墨烯表面之间的界面相互作用以及纳米复合材料中相互连接的导电网络的形成。RGO-g-PEAn和FLG-g-PEAn在最佳条件下的电导率分别为4.32 × 10−1和1.764 S cm−1,比原始PEAn (5.29 × 10−7 S cm−1)高出约6个数量级。此外,通过密度泛函理论(DFT)计算研究了合成复合材料的电荷转移能力,为实验观察到的结构-性能关系提供了理论支持。这项研究的结果表明,石墨烯辅助无氧化剂聚合,以及RSM优化和DFT分析的结合,为开发用于电子应用的导电PEAn/石墨烯纳米复合材料提供了一种有效的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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