A-Site Cation Engineering of CsPbBr3 Nanocrystals: Correlating Lattice Microstrain, Optical Properties, and Photodetector Performance

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
ACS Applied Electronic Materials Pub Date : 2026-10-13 Epub Date: 2026-09-25 DOI:10.1021/acsaelm.6c01337
Ying Lu, Huiming Luo, Zied Hosni, Yuxuan Wang, Shurui Yang, Zeshi Li, Yujia Li, Firoz Alam, Javad Shamsi, Shahab Akhavan, Bing Li, Mojtaba Abdi-Jalebi
{"title":"A-Site Cation Engineering of CsPbBr3 Nanocrystals: Correlating Lattice Microstrain, Optical Properties, and Photodetector Performance","authors":"Ying Lu,&nbsp;Huiming Luo,&nbsp;Zied Hosni,&nbsp;Yuxuan Wang,&nbsp;Shurui Yang,&nbsp;Zeshi Li,&nbsp;Yujia Li,&nbsp;Firoz Alam,&nbsp;Javad Shamsi,&nbsp;Shahab Akhavan,&nbsp;Bing Li,&nbsp;Mojtaba Abdi-Jalebi","doi":"10.1021/acsaelm.6c01337","DOIUrl":null,"url":null,"abstract":"<p>All-inorganic cesium lead bromide (CsPbBr<sub>3</sub>) nanocrystals (NCs) have recently attracted extensive attention due to their high photoluminescence quantum yield (PLQY), tunable bandgap, and promising applications in photodetectors. However, the stability of photodetector devices is still limited by the defect states, lattice microstrain, and phase instability. In this work, we investigate the effects of A-site cation doping (K<sup>+</sup>, Rb<sup>+</sup>, and FA<sup>+</sup>) on the structural, optical, and photodetection properties of CsPbBr<sub>3</sub> NCs, leading to stable photodetectors. By combining the Williamson–Hall method and DFT calculations, it has been confirmed that moderate A-site doping can preserve the cubic perovskite phase while inducing slight lattice contraction, reducing dislocation density, and enhancing crystallinity. As a result, the microstrain of 5% Rb<sup>+</sup>-doped (nominal precursor concentrations) CsPbBr<sub>3</sub> lattice is stable around 0.0028, while its PLQY increases to 98.7% (solution) and the slow-decay lifetime extends to 81.65 ns. The photodetector devices based on doped CsPbBr<sub>3</sub> NCs exhibit enhanced responsivity around 6.99 A/W at a high incident power of 28.1 mW, and the detectivity is stabilized around 4.9 × 10<sup>10</sup> Jones at the light intensity from 5.6 to 22.5 mW. These findings provide clear evidence that rational A-site cation engineering is an effective strategy to optimize the optoelectronic performance of CsPbBr<sub>3</sub> NCs for high-performance photodetectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 19","pages":"8552–8564"},"PeriodicalIF":4.7000,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.6c01337","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/9/25 0:00:00","PubModel":"Epub","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

All-inorganic cesium lead bromide (CsPbBr3) nanocrystals (NCs) have recently attracted extensive attention due to their high photoluminescence quantum yield (PLQY), tunable bandgap, and promising applications in photodetectors. However, the stability of photodetector devices is still limited by the defect states, lattice microstrain, and phase instability. In this work, we investigate the effects of A-site cation doping (K+, Rb+, and FA+) on the structural, optical, and photodetection properties of CsPbBr3 NCs, leading to stable photodetectors. By combining the Williamson–Hall method and DFT calculations, it has been confirmed that moderate A-site doping can preserve the cubic perovskite phase while inducing slight lattice contraction, reducing dislocation density, and enhancing crystallinity. As a result, the microstrain of 5% Rb+-doped (nominal precursor concentrations) CsPbBr3 lattice is stable around 0.0028, while its PLQY increases to 98.7% (solution) and the slow-decay lifetime extends to 81.65 ns. The photodetector devices based on doped CsPbBr3 NCs exhibit enhanced responsivity around 6.99 A/W at a high incident power of 28.1 mW, and the detectivity is stabilized around 4.9 × 1010 Jones at the light intensity from 5.6 to 22.5 mW. These findings provide clear evidence that rational A-site cation engineering is an effective strategy to optimize the optoelectronic performance of CsPbBr3 NCs for high-performance photodetectors.

CsPbBr3纳米晶体的a位阳离子工程:相关晶格微应变、光学性质和光电探测器性能
全无机铯-溴化铅(CsPbBr3)纳米晶体(NCs)因其高光致发光量子产率(PLQY)、可调谐带隙以及在光电探测器中的应用前景而受到广泛关注。然而,光电探测器器件的稳定性仍然受到缺陷态、晶格微应变和相不稳定性的限制。在这项工作中,我们研究了a位阳离子掺杂(K+, Rb+和FA+)对CsPbBr3 NCs结构,光学和光探测性能的影响,从而导致稳定的光电探测器。结合Williamson-Hall方法和DFT计算,证实了适度的a位掺杂可以保留立方钙钛矿相,同时引起轻微的晶格收缩,降低位错密度,提高结晶度。结果表明,5% Rb+掺杂(名义前体浓度)CsPbBr3晶格的微应变稳定在0.0028左右,PLQY增加到98.7%(溶液),慢衰寿命延长到81.65 ns。基于掺杂CsPbBr3 NCs的光电探测器在28.1 mW高入射功率下的响应率提高到6.99 A/W左右,在5.6 ~ 22.5 mW光强范围内的探测率稳定在4.9 × 1010 Jones左右。这些研究结果清楚地证明了合理的a位阳离子工程是优化CsPbBr3 NCs用于高性能光电探测器光电性能的有效策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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