Optical field enhanced tunable plasmonic absorber based on high-index contrast grating employing ENZ state of ITO

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Suresh Kumar Pandey, Rahul Dev Mishra, Ashutosh Kumar, Santosh Kumar, Prem Babu, Nikita Mohanta, Mukesh Kumar
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引用次数: 0

Abstract

An optical field-enhanced tunable plasmonic absorber based on a high-index contrast grating (HCG) utilizes the epsilon-near-zero (ENZ) properties of indium tin oxide (ITO) is experimentally demonstrated. The HCG enhances light–matter interaction, while the engineered ENZ state of ITO increases optical absorption. The plasma frequency is tailored to 1550 nm to enable efficient electro‑optic tuning. The device demonstrates precise control of light absorption and modulation, achieving an extinction ratio of 1.9 dB/µm, It also supports a 3 dB bandwidth of 72 GHz, making it suitable for high-speed optical communication systems. Additionally, energy consumption is remarkably low, at 56.25 p-Joules/bit, underscoring its efficiency. These results indicate that the proposed absorber is a promising candidate for low‑power and high‑speed integrated photonic systems.

基于ITO ENZ态的高折射率对比光栅的光场增强可调谐等离子体吸收体
实验证明了一种基于高折射率对比光栅(HCG)的光场增强可调谐等离子体吸收体利用了氧化铟锡(ITO)的epsilon-near-zero (ENZ)特性。HCG增强了光-物质相互作用,而ITO的工程ENZ态增加了光吸收。等离子体频率被定制为1550纳米,以实现高效的电光调谐。该器件能够精确控制光吸收和调制,消光比达到1.9 dB/µm,还支持72 GHz的3db带宽,适用于高速光通信系统。此外,能耗非常低,为56.25 p焦耳/位,强调了其效率。这些结果表明,所提出的吸收体是低功率和高速集成光子系统的一个有希望的候选者。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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