Yang Liu;Nengxu Zhu;Jinxin Li;Xuan Li;Zhifu Hu;Meilin He;Keyuan Chen;Fanyi Meng
{"title":"A Compact 75--105 GHz Symmetric-Cell-Based Distributed Attenuator With Broadband Phase Compensation","authors":"Yang Liu;Nengxu Zhu;Jinxin Li;Xuan Li;Zhifu Hu;Meilin He;Keyuan Chen;Fanyi Meng","doi":"10.1109/LMWT.2026.3684077","DOIUrl":null,"url":null,"abstract":"This letter introduces a compact distributed attenuator with low phase error, employing a novel second-order phase correction (SOPC) technique. In each attenuation unit, two switch transistors are symmetrically distributed at both ends of the transmission line to form a second-order network, effectively compensating phase deviations without extra area overhead. The analysis and design of the attenuator are described. The proposed 5-bit attenuator is fabricated in a 130-nm SiGe BiCMOS process. Measurement results demonstrate that over 75–105 GHz, the attenuator achieves an insertion loss of 3.1–4.6 dB and a 12.8 dB tuning range with 0.4 dB step size. The rms phase error is <2°>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1679-1682"},"PeriodicalIF":3.4000,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11503140/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/3/4 0:00:00","PubModel":"Epub","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter introduces a compact distributed attenuator with low phase error, employing a novel second-order phase correction (SOPC) technique. In each attenuation unit, two switch transistors are symmetrically distributed at both ends of the transmission line to form a second-order network, effectively compensating phase deviations without extra area overhead. The analysis and design of the attenuator are described. The proposed 5-bit attenuator is fabricated in a 130-nm SiGe BiCMOS process. Measurement results demonstrate that over 75–105 GHz, the attenuator achieves an insertion loss of 3.1–4.6 dB and a 12.8 dB tuning range with 0.4 dB step size. The rms phase error is <2°>2.