A Compact 75--105 GHz Symmetric-Cell-Based Distributed Attenuator With Broadband Phase Compensation

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC
Yang Liu;Nengxu Zhu;Jinxin Li;Xuan Li;Zhifu Hu;Meilin He;Keyuan Chen;Fanyi Meng
{"title":"A Compact 75--105 GHz Symmetric-Cell-Based Distributed Attenuator With Broadband Phase Compensation","authors":"Yang Liu;Nengxu Zhu;Jinxin Li;Xuan Li;Zhifu Hu;Meilin He;Keyuan Chen;Fanyi Meng","doi":"10.1109/LMWT.2026.3684077","DOIUrl":null,"url":null,"abstract":"This letter introduces a compact distributed attenuator with low phase error, employing a novel second-order phase correction (SOPC) technique. In each attenuation unit, two switch transistors are symmetrically distributed at both ends of the transmission line to form a second-order network, effectively compensating phase deviations without extra area overhead. The analysis and design of the attenuator are described. The proposed 5-bit attenuator is fabricated in a 130-nm SiGe BiCMOS process. Measurement results demonstrate that over 75–105 GHz, the attenuator achieves an insertion loss of 3.1–4.6 dB and a 12.8 dB tuning range with 0.4 dB step size. The rms phase error is <2°>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1679-1682"},"PeriodicalIF":3.4000,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11503140/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/3/4 0:00:00","PubModel":"Epub","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This letter introduces a compact distributed attenuator with low phase error, employing a novel second-order phase correction (SOPC) technique. In each attenuation unit, two switch transistors are symmetrically distributed at both ends of the transmission line to form a second-order network, effectively compensating phase deviations without extra area overhead. The analysis and design of the attenuator are described. The proposed 5-bit attenuator is fabricated in a 130-nm SiGe BiCMOS process. Measurement results demonstrate that over 75–105 GHz, the attenuator achieves an insertion loss of 3.1–4.6 dB and a 12.8 dB tuning range with 0.4 dB step size. The rms phase error is <2°>2.
带宽带相位补偿的紧凑75—105 GHz对称单元分布式衰减器
本文介绍了一种采用新型二阶相位校正(SOPC)技术的小型低相位误差分布式衰减器。在每个衰减单元中,两个开关晶体管对称分布在传输线的两端,形成一个二阶网络,有效补偿相位偏差而不增加额外的面积开销。介绍了衰减器的分析与设计。提出的5位衰减器是在130纳米SiGe BiCMOS工艺中制造的。测量结果表明,在75 ~ 105 GHz范围内,衰减器的插入损耗为3.1 ~ 4.6 dB,调谐范围为12.8 dB,步长为0.4 dB。均方根相位误差为2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书