A Monolithic GaN-Based Two-Phase Buck Converter With Dead-Time Shaping Driver for Envelope Tracking Application

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-12 DOI:10.1109/LMWT.2026.3689881

Xiangcong Zhai;Xiangran Ni;Nuo Li;Zhiguang Hao;Ke Wei;Xinyu Liu;Weijun Luo

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Abstract

To prevent dead-time control pulses from collapsing at high switching frequencies and low duty cycles, this letter presents a monolithic GaN-based two-phase buck converter with an integrated dead-time shaping (DTS) driver. Acting as a pulse restoration stage, the DTS combines capacitive load decoupling with edge regeneration to suppress pulse degradation and sharpen transitions, enabling reliable transmission of nanosecond-scale dead-time control pulses and full swing switching. The converter was designed and fabricated in a 0.25-

$\mu $

m GaN-on-Si process. Measurements show a minimum full swing on time of 1.5 ns at 100 MHz and a peak power stage efficiency of 87.4%, with a maximum output power of 6.96 W at 120 MHz. The converter is also validated as an envelope tracking supply modulator (ETSM), achieving 80.8% power stage efficiency and 0.51-W average output power while tracking a 50-MHz bandwidth signal with a 12-dB peak-to-average power ratio (PAPR).

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用于包络跟踪的带死区整形驱动器的单片氮化镓两相降压变换器

为了防止死区时间控制脉冲在高开关频率和低占空比下崩溃，本文提出了一种基于gan的单片两相降压变换器，该变换器具有集成死区时间整形（DTS）驱动器。作为脉冲恢复阶段，DTS结合了电容负载解耦和边缘再生来抑制脉冲退化和锐化过渡，从而实现纳秒级死区时间控制脉冲和全摆幅开关的可靠传输。设计并制作了0.25 μ m的GaN-on-Si工艺转换器。测量结果表明，在100 MHz时，最小全摆幅时间为1.5 ns，峰值功率级效率为87.4%，在120 MHz时最大输出功率为6.96 W。该转换器还被验证为包络跟踪电源调制器（ETSM），可实现80.8%的功率级效率和0.51 w的平均输出功率，同时跟踪50 mhz带宽信号，峰值平均功率比（PAPR）为12 db。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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