Space Charge Characteristic of Silicone Elastomer Used in SiC Device Under High Temperature up to 200 °C

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jinqiang Zhang;Xuebao Li;Yujie Liao;Yumeng Cai;Zezhong Sun;Peng Sun;Zhaocheng Liu;Zhibin Zhao
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Abstract

In order to study the space charge characteristics of silicone elastomers at high temperatures, a high-temperature pulse electro-acoustic (PEA) space charge characteristic measurement system with a temperature range of room temperature ( $25~^{\circ }$ C)– $200~^{\circ }$ C was developed in this article. The system developed in this article can meet the temperature control and measurement requirements through actual temperature measurement and calibration. Through this system, this article studies the space charge characteristics and short-circuit characteristics of silicone elastomers under different polarity dc voltages in the range of $25~^{\circ }$ C– $200~^{\circ }$ C. With the increase of temperature, the charge accumulation depth first increases and then decreases, and the charge accumulation amount first increases and then decreases. The migration rate of negative polarity charges is greater than that of positive polarity charges. The trap characteristics of silicone elastomers at different temperatures are analyzed by charge dissipation characteristics. At lower temperatures, the deep trap density is greater than the shallow trap density, whether it is electron traps or hole traps. When it is greater than a certain temperature, the shallow trap density is greater than the deep trap density. Temperature affects charge generation and charge migration. At low temperatures, the charge injection amount increases and becomes the dominant factor. When the temperature increases, the charge mobility increases and becomes the dominant factor, so the charge accumulation amount and trap density both increase and then decrease with temperature.
用于SiC器件的硅弹性体在高达200°C高温下的空间电荷特性
为了研究有机硅弹性体在高温下的空间电荷特性,研制了温度范围为室温($25~^{\circ}$ C) ~ $200~^{\circ}$ C的高温脉冲电声(PEA)空间电荷特性测量系统。本文开发的系统通过实际的温度测量和校准,可以满足温度控制和测量的要求。通过该系统,本文研究了硅弹性体在$25~^{\circ}$ C ~ $200~^{\circ}$ C范围内不同极性直流电压下的空间电荷特性和短路特性。随着温度的升高,电荷积累深度先增大后减小,电荷积累量先增大后减小。负极电荷的迁移速率大于正极电荷的迁移速率。利用电荷耗散特性分析了硅弹性体在不同温度下的阱特性。在较低温度下,无论是电子陷阱还是空穴陷阱,深陷阱密度都大于浅陷阱密度。当温度大于一定时,浅阱密度大于深阱密度。温度影响电荷的产生和电荷的迁移。在低温下,电荷注入量增加,成为主导因素。当温度升高时,电荷迁移率增加并成为主导因素,因此电荷蓄积量和陷阱密度随温度的升高先增大后减小。
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来源期刊
IEEE Transactions on Dielectrics and Electrical Insulation
IEEE Transactions on Dielectrics and Electrical Insulation 工程技术-工程:电子与电气
CiteScore
6.00
自引率
22.60%
发文量
309
审稿时长
5.2 months
期刊介绍: Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.
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