Jong Won Baek, Ju-Hyun Jung, Hyeong-Seok Kim, Junho Kim, Dong-Hyun Kim, Jangyup Son, Sangyul Ha
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引用次数: 0
Abstract
As back-end-of-line (BEOL) scaling pushes porous low-k dielectrics toward their reliability limits, nonporous dielectrics that combine a low dielectric constant (k) with mechanical, thermal, and interfacial robustness are increasingly needed. Among nonporous low-k candidates, amorphous boron nitride (aBN) has attracted attention for advanced BEOL interconnects owing to its low-k value (k ≈ 2) and high mechanical robustness, as reflected by a Young’s modulus of ~50 GPa. In this review, we discuss aBN from a BEOL process-integration perspective, focusing on the origin of its low-k behavior, process-dependent structure–property relationships, and its potential roles in BEOL interconnects and hybrid-bonding interfaces. Finally, we discuss remaining issues and future directions for validating aBN as a nonporous low-k dielectric/interface material under BEOL and hybrid-bonding integration.
期刊介绍:
Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects.
Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.