A Low-Power CMOS-Only Voltage Reference

IF 1.4 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Evi Keramida, George Souliotis, Spyridon Vlassis, Fotis Plessas
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引用次数: 0

Abstract

A novel CMOS-only voltage reference is proposed in this paper, utilizing neither bipolar junction transistors nor operational amplifiers. To obtain a temperature-independent voltage at the output, the circuit combines two opposite temperature coefficient (TC) voltages, the proportional-to-absolute temperature voltage and the complementary-to-absolute temperature voltage. The proposed voltage generator has been designed in a 65-nm CMOS technology with a supply voltage range from 1.8 to 2.5 V, a voltage reference of 970 mV in a temperature range of −40°C to 120°C and a power supply rejection ratio around −46.5 dB at 100 Hz. The main benefits of the proposed topology are its simple design—consisting of seven MOSFETs and two resistors—a very low TC of approximately 9.67 ppm/°C at the worst-case corner, and a line sensitivity of 0.0765%/V.

一个低功耗cmos电压基准
本文提出了一种新的cmos电压基准,它既不使用双极结晶体管,也不使用运算放大器。为了获得与温度无关的输出电压,电路结合了两个相反的温度系数(TC)电压,比例绝对温度电压和互补绝对温度电压。该电压发生器采用65纳米CMOS技术设计,电源电压范围为1.8至2.5 V,参考电压为970 mV,温度范围为- 40°C至120°C, 100 Hz时电源抑制比约为- 46.5 dB。所提出的拓扑结构的主要优点是其简单的设计-由七个mosfet和两个电阻组成-在最坏情况角处的TC非常低,约为9.67 ppm/°C,线路灵敏度为0.0765%/V。
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来源期刊
International Journal of Circuit Theory and Applications
International Journal of Circuit Theory and Applications 工程技术-工程:电子与电气
CiteScore
3.60
自引率
34.80%
发文量
277
审稿时长
4.5 months
期刊介绍: The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.
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