Unveiling the MgCl2 activation on grain boundary passivation in thermally evaporated CdTe films for solar cells

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Suman Kumari, G. Chasta,  Himanshu, D. Suthar, N. Kumari, M. S. Dhaka
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引用次数: 0

Abstract

Present work exhibits influence of affordable, non-carcinogenic, low-cost, eco-friendly, non-toxic MgCl2 activation on grain boundary passivation and physical characteristics of resistive heating-based thermally evaporated CdTe thin films (having thickness 600 nm) where prepared layers are treated with MgCl2 followed by annealing in air atmosphere at 235 °C, 310 °C and 385 °C temperatures. All the CdTe films reveal to polycrystalline crystallographic behavior having cubic phase with (310) orientation as favored reflection. An increase in electrical resistivity is observed with activation treatment whereas crystallite size, optical energy bandgap and average surface roughness are varied in 35–45 nm, 1.43–1.60 eV and 8.6–32.7 nm ranges, respectively with activation treatment temperature. The absorbance and transmittance spectra are strongly modified with MgCl2 activation whereas the surface topography of films indicate hillock-like structures. The PL spectra of treated CdTe films show two emission peaks positioned at ~652 nm and ~705 nm. The findings show that CdTe films activated with MgCl2 at 310 °C might be utilized as vibrant light absorbing layers for solar cell applications.

揭示了MgCl2对太阳能电池热蒸发CdTe薄膜晶界钝化的激活作用
本研究展示了经济实惠、无致癌、低成本、环保、无毒的MgCl2活化对电阻加热基热蒸发CdTe薄膜(厚度为600 nm)晶界钝化和物理特性的影响,其中制备的层用MgCl2处理,然后在235℃、310℃和385℃的空气气氛中退火。所有的CdTe薄膜都显示出多晶的结晶行为,具有(310)取向的立方相作为有利反射。随着活化温度的升高,晶粒尺寸、光能带隙和平均表面粗糙度分别在35 ~ 45 nm、1.43 ~ 1.60 eV和8.6 ~ 32.7 nm范围内变化。吸收光谱和透射光谱在MgCl2活化下发生了明显的变化,而薄膜表面形貌呈丘状结构。处理后的CdTe薄膜在~ 652nm和~ 705nm处有两个发射峰。研究结果表明,在310°C下,MgCl2活化的CdTe薄膜可以用作太阳能电池的动态光吸收层。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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