Maamon A. Farea, Mohammad N. Murshed, Hamed Y. Mohammed, Norliana Yusof, Najlaa D. Alharbi
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引用次数: 0
Abstract
Sulfate-engineered bismuth ferrite nanostructures (BiFeO3–Sx, x = 10, 15, and 20%) were fabricated via a glycine-assisted sol–gel combustion route and systematically evaluated as chemiresistive sensors for hydrogen sulfide (H2S) detection. Structural and spectroscopic characterization confirmed the presence of sulfate species in all modified samples; BiFeO3–S15 retained the single-phase rhombohedral structure, whereas secondary phases were detected at 10 and 20% sulfate. Among the compositions studied, BiFeO3–S15 displayed the most favorable textural properties, combining a larger specific surface area with a well-developed porous morphology, as verified by BET and AFM analyses. At an optimized operating temperature of 200 °C, BiFeO3–S15 achieved a peak sensing response of 98 toward 60 ppm H2S, substantially outperforming both pristine BiFeO3 and the other sulfate-modified samples. The optimized sensor further exhibited rapid, reversible response–recovery kinetics, robust repeatability, and pronounced selectivity over interfering gases, including NO2, SO2, CO, and NO, at equivalent concentrations, while retaining stable output over a 14-day continuous monitoring period. Collectively, these findings establish sulfate modification as an effective route to enhancing the gas-sensing performance of BiFeO3-based perovskites, underscoring their promise for real-time air-quality monitoring and environmental pollution control.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.