Enhanced electromagnetic wave attenuation in Ca-substituted DyFeO3 orthoferrites: role of defect engineering and magnetic resonance

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Arja Vani, Anusha Karumuri, Kumara Raja Kandula, Tinku Baidya
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引用次数: 0

Abstract

The development of lightweight and high-performance microwave absorbing materials has become increasingly important owing to the rapid expansion of wireless communication systems and the growing demand for effective electromagnetic interference (EMI) shielding. Rare-earth orthoferrites have emerged as promising candidates because of their remarkable magnetic ordering, structural stability, and tunable dielectric properties. In this study, Dy1-xCaxFeO3 (x = 0 to 0.3) ceramics were synthesized by improved sol–gel method to investigate the influence of Ca2+ substitution on their structural, vibrational, magnetic, and microwave absorption characteristics. X-ray diffraction confirmed the formation of a single-phase orthorhombic perovskite structure (Pbnm) without detectable secondary phases, demonstrating that Ca substitution preserves the structural integrity of DyFeO3. The crystallite size remained within the nanometer range, while slight variations in lattice strain reflected local structural distortion induced by aliovalent substitution. Raman spectroscopy revealed systematic modifications in the Ag and B2g phonon modes, indicating changes in FeO6 octahedral distortion and lattice dynamics. FESEM analysis showed densely packed polycrystalline particles with average particle sizes increasing from approximately 271 to 392 nm as the Ca content increased. Magnetic measurements demonstrated enhanced ferromagnetic behavior resulting from modified Fe–O–Fe exchange interactions and spin canting. The complex permittivity and permeability measured in the 2–18 GHz frequency range revealed improved dielectric polarization, magnetic relaxation, and impedance matching after Ca substitution. Among all compositions, Dy1-xCaxFeO3 (x = 0.1) exhibited the strongest microwave absorption; achieving a minimum reflection loss of approximately −34 dB near 12 GHz. Cole–Cole analysis confirmed multiple non-Debye relaxation processes associated with interfacial polarization, oxygen vacancies, and Fe3+/Fe4+ electron hopping. The synergistic interaction between dielectric loss, magnetic loss, and optimized impedance matching significantly enhances microwave attenuation, highlighting Dy1-xCaxFeO3 (x = 0.1) as a promising material for electromagnetic interference shielding and microwave absorption applications.

钙取代DyFeO3正铁氧体中电磁波衰减增强:缺陷工程和磁共振的作用
由于无线通信系统的迅速扩展和对有效电磁干扰(EMI)屏蔽的需求日益增长,轻质和高性能吸波材料的发展变得越来越重要。稀土正铁氧体由于其显著的磁性有序、结构稳定性和可调谐的介电特性而成为有希望的候选者。本文采用改进的溶胶-凝胶法制备了Dy1-xCaxFeO3 (x = 0 ~ 0.3)陶瓷,研究了Ca2+取代对其结构、振动、磁性和微波吸收特性的影响。x射线衍射证实形成了一种没有检测到二次相的单相正交钙钛矿结构(Pbnm),表明Ca取代保留了DyFeO3的结构完整性。晶体尺寸保持在纳米范围内,而晶格应变的微小变化反映了由共价取代引起的局部结构畸变。拉曼光谱显示Ag和B2g声子模式发生了系统的变化,表明FeO6八面体畸变和晶格动力学发生了变化。FESEM分析显示,随着Ca含量的增加,多晶颗粒密集排列,平均粒径从271 nm增加到392 nm。磁性测量表明,由于Fe-O-Fe交换相互作用和自旋倾斜,铁磁行为得到了增强。在2-18 GHz频率范围内测量的复介电常数和磁导率表明,Ca取代后介质极化、磁弛豫和阻抗匹配得到改善。其中Dy1-xCaxFeO3 (x = 0.1)的微波吸收最强;在12 GHz附近实现最小反射损耗约为- 34 dB。Cole-Cole分析证实了与界面极化、氧空位和Fe3+/Fe4+电子跳变有关的多个非debye弛豫过程。介质损耗、磁损耗和优化阻抗匹配之间的协同作用显著增强了微波衰减,突出表明Dy1-xCaxFeO3 (x = 0.1)是一种有前途的电磁干扰屏蔽和微波吸收材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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