Enhanced methane adsorption and dissociation on Co-doped VO\(_{2}\)(110) surface: a DFT + U study

IF 1.9 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
S. E. Boungou, C. L. Malonga Matanou, A. L. Okana-Lomanga, B. R. Malonda-Boungou, A. T. Raji, P. S. Moussounda
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引用次数: 0

Abstract

We report first-principles density-functional theory (DFT with Hubbard U) investigation of the adsorption and dissociation mechanisms of CH\(_{4}\) on the VO\(_{2}\) surface. We have considered three types of VO\(_{2}\) surfaces, namely, the pristine defect-free, oxygen vacancy, and co-doped VO\(_{2}\)(110) surfaces. The doped surface is identified as the most suitable for CH\(_{4}\) dissociation reaction due to enhanced stability of atomic and molecular radicals involved in the proposed CH\(_{4}\) dissociation reaction. We obtained adsorption, dissociation, and interaction energies, as well as the reaction enthalpies of the dissociation intermediates. These parameters were used to identify the energetically most favorable reaction pathway for CH\(_{4}\) dissociation via the thermochemistry approach. Four possible reaction pathways were considered: CH\(_{4}\) \(\rightarrow \) CH\(_{3}\) + H; CH\(_{4}\) \(\rightarrow \) CH\(_{2}\) + 2H; CH\(_{4}\) \(\rightarrow \) CH + 3H; and CH\(_{4}\) \(\rightarrow \) C + 4H. Based on the reaction enthalpy (\(\Delta H\)), we found that the pathways CH\(_{4}\) \(\rightarrow \) CH\(_{3}\) + H and CH\(_{4}\) \(\rightarrow \) C + 4H are energetically favorable with \(\Delta \)H of −0.16 eV and −2.58 eV, respectively. In contrast, the reaction pathways CH\(_{4}\) \(\rightarrow \) CH\(_{2}\) + 2H and CH\(_{4}\) \(\rightarrow \) CH + 3H are endothermic with positive \(\Delta H\), suggesting that the dissociation pathways are energetically unfavorable. Electronic structure analysis shows charge transfer from the adsorbed species to the surface and hybridizations of p orbitals of C and O, and Co-d and C-p orbitals. Charge transfer and hybridization are the electronic origin of the stability of the dissociated or adsorbed products. Our study demonstrates that Co doping enhances the catalytic dissociation of CH\(_{4}\) on the VO\(_{2} \)(110) surface thus underlying the role of defect engineering via metal doping in surface catalysis while also proposing Co-doped VO\(_{2} \)(110) surface as a promising candidate material for CH\(_{4}\) dissociation and hydrogen production.

共掺杂VO \(_{2}\)(110)表面增强甲烷吸附和解离:DFT + U研究
我们报道了第一性原理密度泛函理论(DFT与Hubbard U)研究了CH \(_{4}\)在VO \(_{2}\)表面的吸附和解离机制。我们考虑了三种类型的VO \(_{2}\)表面,即原始无缺陷,氧空位和共掺杂VO \(_{2}\)(110)表面。由于所提出的CH \(_{4}\)解离反应中涉及的原子和分子自由基的稳定性增强,因此被认为是最适合CH \(_{4}\)解离反应的掺杂表面。我们得到了吸附能、解离能和相互作用能,以及解离中间体的反应焓。这些参数被用来通过热化学方法确定能量上最有利的CH \(_{4}\)解离反应途径。考虑了四种可能的反应途径:CH \(_{4}\)\(\rightarrow \) CH \(_{3}\) + H;CH \(_{4}\)\(\rightarrow \) CH \(_{2}\) + 2H;CH \(_{4}\)\(\rightarrow \) CH + 3H;和CH \(_{4}\)\(\rightarrow \) C + 4H。根据反应焓(\(\Delta H\)),我们发现CH \(_{4}\)\(\rightarrow \) CH \(_{3}\) + H和CH \(_{4}\)\(\rightarrow \) C + 4H两种途径在能量上是有利的,\(\Delta \) H分别为- 0.16 eV和- 2.58 eV。相比之下,反应途径CH \(_{4}\)\(\rightarrow \) CH \(_{2}\) + 2H和CH \(_{4}\)\(\rightarrow \) CH + 3H是吸热的,正\(\Delta H\),表明解离途径在能量上是不利的。电子结构分析表明,碳氧化合物的p轨道、Co-d轨道和C-p轨道发生了杂化,电荷从吸附物质转移到表面。电荷转移和杂化是解离或吸附产物稳定性的电子来源。我们的研究表明,Co掺杂增强了CH \(_{4}\)在VO \(_{2} \)(110)表面的催化解离,从而揭示了通过金属掺杂进行缺陷工程在表面催化中的作用,同时也提出了Co掺杂VO \(_{2} \)(110)表面作为CH \(_{4}\)解离和制氢的有希望的候选材料。
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来源期刊
The European Physical Journal B
The European Physical Journal B 物理-物理:凝聚态物理
CiteScore
2.80
自引率
6.20%
发文量
184
审稿时长
5.1 months
期刊介绍: Solid State and Materials; Mesoscopic and Nanoscale Systems; Computational Methods; Statistical and Nonlinear Physics
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